IPI90R800C3XKSA1

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The IPI90R800C3XKSA1 is a single N-channel power MOSFET with an insulated-gate field-effect-transistor (IGFET) structure, designed primarily for use in high-voltage switching applications. It is an advanced device manufactured using Intersil Corporation\'s (ISL) high voltage, high performance, and high reliability process technology. The device has an integrated, robust power MOSFET designed to reduce power losses and lower forward voltage drop.

The IPI90R800C3XKSA1 possesses a low on-resistance, a total gate charge (Qg) of 89nC, and a safe operating area (SOA). The device has a low gate-source voltage (VGS) threshold of 1.0V and a very fast turn-on and turn-off times. All these features, coupled with its excellent ruggedness, make it a very reliable, robust, and easy-to-design N-channel power MOSFET device.

The IPI90R800C3XKSA1 is often used in applications such as solar cell panels, battery chargers, motor control circuits, DC-DC converters and motor controllers. Its superior low on-resistance and low gate charge characteristics make the device suitable for a variety of power management control applications. The device\'s low switching loss helps to minimize heat dissipation and system power loss, and the device can also be used to provide low voltage drop and a high level of reliability. Additionally, the device is an excellent choice for a wide range of high-current, high-voltage applications in hostile environments.

The IPI90R800C3XKSA1 operates using the basic principle of an insulated-gate field-effect transistor (IGFET) which is a voltage controlled device capable of controlling current. In operation, a voltage is applied to the gate of the transistor which results in an electric field across the gate oxide of the device. This electric field causes a change in the current between the source and the drain of the device, resulting in the control of current. The device is designed to be used in high-current applications, where the gate voltage needs to be controlled to switch the current between the drain and the source of the device.

The IPI90R800C3XKSA1 is an excellent device for a wide variety of applications. The device has excellent temperature stability, high efficiency and ruggedness. Additionally, its inherent low on-resistance and low gate charge help to reduce power loss, making the device an ideal choice for high-voltage switching applications in hostile environments. The device also has a low VGS threshold of 1.0V, making it suitable for a wide range of applications where low forward voltage drop is required.

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