IRF100P218XKMA1

Gate Charge (Qg) (Max) @ Vgs:	555nC @ 10V
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	556W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	25000pF @ 50V
Vgs (Max):	±20V
Series:	StrongIRFET™
Vgs(th) (Max) @ Id:	3.8V @ 278µA
Rds On (Max) @ Id, Vgs:	1.28 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IRF100P218XKMA1 is part of the International Rectifier’s family of metal-oxide-semiconductor field-effect transistors (MOSFETs). It is a single field-effect transistor (FET) designed to perform a variety of high-current switching or amplifying functions. The IRF100P218XKMA1 is a discrete component, meaning it is an individual component on its own and not part of a larger subsystem.The IRF100P218XKMA1 is a very popular device due to its high maximum drain current rating, which is rated at 18.3 amps. It also has a very low on-state resistance with a rating of 0.118 ohms. The IRF100P218XKMA1 is available in a surface mount package and operates over a voltage range of -55V to +100V. It is characterized for operation with Pulse Width Modulation (PWM) signals in applications ranging from 35kHz all the way up to 1.2MHz. The IRF100P218XKMA1 utilizes an N-Channel silicon MOSFET, which is comprised of several layers of material that create an insulated structure. This insulated structure enables both efficient transfer of electron charge and control of current flow. The IRF100P218XKMA1 has an operating temperature range from -55°C to +150°C.The IRF100P218XKMA1 has a variety of applications ranging from consumer electronics to robotics, industrial automation and energy management solutions. Its high drain current rating makes it suitable for applications requiring high-power switching or amplification of DC or AC signals. It is also well suited for applications that require switching with pulse width modulation (PWM) signals. The IRF100P218XKMA1 typically works by applying an input voltage across its gates. This results in a change in the voltage across its channels and enables the current flow through its drain. The on-state voltage of the device can be precisely controlled with the help of the gate signal, allowing it to be used as a switch or an amplifier depending on the signal current strength. The device also has a low on-state resistance, which helps to minimize power losses during switching or amplification.The IRF100P218XKMA1 is a very reliable and rugged device, making it suitable for a wide range of applications. It is capable of switching and amplifying both AC and DC signals efficiently, which makes it ideal for various high-power applications. Its low on-state resistance and low switching/amplifying losses make it a great choice for consumer electronics, robotics, industrial automation and energy management solutions alike.

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