Allicdata Part #: | IRF1404STRRPBF-ND |
Manufacturer Part#: |
IRF1404STRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 162A D2PAK |
More Detail: | N-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Surfa... |
DataSheet: | IRF1404STRRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7360pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 95A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 162A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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IRF1404STRRPBF is a semiconductor device infamously known as the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and it forms the basis for the operational power regulating components. This particular MOSFET comes from a family of MOSFETs known as single P-channel MOSFETs. It comes in a TO-220 package, and has a drain current of 80 Amps (maximum) at 100 degrees Celsius and a drain-source voltage of 100 Volts (maximum).
The IRF1404STRRPBF is used primarily in the design and construction of DC to DC converters, solar inverters, and in switching regulators which need to handle loads that require high current capacity. The typical operation principles of MOSFETs apply to this device. It is suitable for applications asking for high current densities such as motor control, power supply switching and rectification, regulating power output in small form-factor projects and conditioners, LED lighting applications, and for audio-signal switching.
The device works by allowing the drain current to pass through when the gate voltage is kept lower than the source voltage. This allows a significant current reduction with just a small change of the voltage. The more the voltage is increased, the more current can be applied. This makes the MOSFET very advantageous in applications where current flow is strongly linked to the voltage differences, because of its high level of current modulation.
To use the IRF1404STRRPBF, an external bias voltage should be applied at the gate in order to switch the load current.The most important feature of this device is that it is able to control the voltage about ten times greater than what is applied on its gate. Due to this voltage gain, this type of MOSFET is often used in high-voltage switching applications, as it allows for fast and efficient switching.
Because the device does not require a large gate drive current, it is much more practical for use in high-current, high-voltage applications. Even though the maximum drain-source voltage is only 100 Volts, the device is still suitable for applications with higher voltage because of its high-current capacity.
Overall, the IRF1404STRRPBF is a powerful and efficient device which was designed for use in DC to DC converter and power conditioning circuits. It is easy to use and can provide excellent performance in applications which need to switch high currents on and off, at high voltages.
The specific data is subject to PDF, and the above content is for reference
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