IRF1010ZSTRRPBF Allicdata Electronics
Allicdata Part #:

IRF1010ZSTRRPBF-ND

Manufacturer Part#:

IRF1010ZSTRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 140W (Tc) Surface Mount D2P...
DataSheet: IRF1010ZSTRRPBF datasheetIRF1010ZSTRRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The IRF1010ZSTRRPBF is a N-Channel enhancement mode field-effect transistor (FET) from International Rectifier which is a fully-owned subsidiary of Infineon Technologies. The IRF1010ZSTRRPBF is designed for high-power commercial and industrial applications such as Direct Current (DC) to Direct Current (DC) converters, controllers, and power supplies. It is also specifically designed for hi-rel applications, ruggedized systems and commercial switch-mode power supplies.

The IRF1010ZSTRRPBF FET exhibits a number of features that make it an ideal choice for power supply applications. It has an on-resistance of 16m ohms and a current rating of 48A, making it capable of providing the high power necessary for industrial power supplies and controllers. Additionally, this FET has an excellent thermal resistance rating of 1.15C/W, making it suitable for high temperature applications. The IRF1010ZSTRRPBF also exhibits overload protection and responds rapidly to changes in operating conditions.

The IRF1010ZSTRRPBF is a single N-Channel, enhancement-mode FET, meaning that it can be used to control the current flow in the circuit. In a standard electrical circuit, the N-Channel FET acts like a switch which can be opened and closed. When the FET is turned off, the current flow is interrupted and the circuit is rendered inactive; when it is turned on, the current flow resumes and the circuit is active. The IRF1010ZSTRRPBF accomplishes this same task, but is especially suitable for high-power and hi-rel applications.

The IRF1010ZSTRRPBF has a maximum drain source voltage of 55V and a breakdown voltage of 44V. This makes it suitable for low-voltage, low-power applications. Additionally, the IRF1010ZSTRRPBF features a high-speed switching capability, quick gate recovery time, and a wide range of temperature operation (-55C to +125C). Its stand-off voltage of 7V and gate-source voltage of +/-20V enable the FET to operate in a wide range of environments and in a variety of applications.

The IRF1010ZSTRRPBF FET is used in a wide variety of applications that require precise control over current flow, including power supplies and controllers, audio amplifiers, radio frequency (RF) amplifiers, DC-to-DC converters, and motor controllers. Additionally, it is used in applications such as RF power transistors, lighting controllers, solid-state relays, and automotive radios.

Overall, the IRF1010ZSTRRPBF FET is a N-Channel FET which has a number of remarkable features that make it an ideal choice for many power supply and hi-rel applications. Its on-resistance of 16m ohms, current rating of 48A, thermal resistance rating of 1.15C/W, and its maximum drain source voltage of 55V and breakdown voltage of 44V make it the perfect choice for controlling current flow in industrial power supplies and controllers. The IRF1010ZSTRRPBF is also well-suited for a range of applications such as RF power transistors, lighting controllers, and solid-state relays.

The specific data is subject to PDF, and the above content is for reference

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