IRF1010ZPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF1010ZPBF is a FET (Field Effect Transistor) device with single MOSFET (MetalOxide Semiconductor Field Effect Transistor) technology. It is a commonly used type of transistor that can be used in many applications. These transistors are used in power supply circuits and are very efficient in controlling the flow of current.

The IRF1010ZPBF is an enhancement mode N-channel MOSFET. It consists of a single gate input and is used to control electrical current flow. The gate voltage of this MOSFET can range from -4V to 10V, making it a good choice for many applications. It can be used in voltage and current regulation circuits, and its low on-state resistance makes it a good choice for switching applications.

The maximum drain current of the IRF1010ZPBF is 100A, which makes it ideal for high-power applications. It has a maximum drain-source voltage of 100V and a drain-source on-resistance of 90 mOhm. The transistor is made using an EPDM process which allows for low on-state resistance and improved ESD protection.

The application fields of the IRF1010ZPBF include power management, motor control, and power switching. It can be used in power supply circuits, inverters, converters, DC-DC controllers, and motor controllers. It can also be used in power switching circuits, such as those found in HVAC systems and LED displays.

The working principle of the IRF1010ZPBF is based on the principle of a MOSFET. When a positive voltage is applied to the gate, it creates an inversion layer of electrons which attracts positive charges from the drain side and attracts them towards the source. This creates a potential difference between the drain and the source, which in turn controls the flow of current through the transistor.

The gate voltage of the transistor is the key factor which affects its operation. When the gate voltage is increased, more electrons are attracted to the drain side and the drain current increases. Conversely, when the gate voltage is decreased, fewer electrons are attracted to the drain side and the drain current decreases. The on-resistance of the transistor is also affected by the gate voltage, which allows for precise control over the current flow.

The IRF1010ZPBF is a versatile device which can be used in many applications. Its efficiency in power supply circuits and its low on-state resistance makes it a good choice for many applications. The transistor is also compatible with many circuits because of its wide gate voltage range. Together, these features make the IRF1010ZPBF a highly useful device for many applications.

The specific data is subject to PDF, and the above content is for reference