IRF1607 Allicdata Electronics
Allicdata Part #:

IRF1607-ND

Manufacturer Part#:

IRF1607

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 142A TO-220AB
More Detail: N-Channel 75V 142A (Tc) 380W (Tc) Through Hole TO-...
DataSheet: IRF1607 datasheetIRF1607 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 85A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF1607 is a power MOSFET with a built-in Schottky diode. It has fast switching speed, low on-resistance, low power consumption and high current handling capability. Its low on-state resistance makes it ideal for applications where low voltage drop is desired. This MOSFET also has a high-power density, making it suitable for high-power applications. Its low capacitance ensures it can be used in high switching frequency applications where noise reduction is essential.

The IRF1607 is a single device, which consists of an N-channel MOSFET, a Schottky diode, and a resistor element. The N-channel MOSFET has a built-in Schottky diode and a resistor element, which allows for current soft switching. The MOSFET has a high input impedance, which allows for better control over current and voltage. The Schottky diode acts as a protection element for the device, limiting the voltage across it. The resistor element can be used to control the switching speed of the MOSFET.

The IRF1607 has a wide range of applications in industrial, consumer and automotive markets. It can be used for power control, motor control, and power conversion circuits. It has been widely used in motor control applications such as power supplies, brushless DC (BLDC) motors, and switched-mode power supplies. It is also used in switching applications such as power mirrors, power window regulators, power door locks, and power antenna systems. Additionally, it can be used in automotive electronics, such as electric and hybrid vehicles.

When used in motor control applications, the IRF1607 works with a high-side and low-side MOSFET switch, to provide a three phase speed control. The low-side switch is used to control the speed of the motor. The high-side switch is used to handle the current in the circuit and protect the circuit from any over-current conditions. By using the low and high side switches, the IRF1607 can control the motor speed with a high degree of accuracy.

The working principle of the IRF1607 is based on the fact that N-channel MOSFETs, when used in a circuit, will result in an improved current-handling capability and lower voltage drop in the switch. The Schottky diode acts as a protection element for the device, limiting the voltage across it. The resistor element can be used to control the switching speed of the MOSFET.

In conclusion, the IRF1607 is a power MOSFET with a built-in Schottky diode and a resistor element. It has a wide range of applications in various industries, such as motor control and power conversion. Its low on-state resistance, high power density, and fast switching speed make it ideal for high power applications. Its low capacitance ensures it can be used in high switching frequency applications, where noise reduction is essential. Its working principle is based on the fact that N-channel MOSFETs will result in an improved current-handling capability and lower voltage drop in the switch. The Schottky diode acts as a protection element for the device, while the resistor element can be used to control the switching speed of the MOSFET.

The specific data is subject to PDF, and the above content is for reference

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