IRF1324STRL-7PP Allicdata Electronics

IRF1324STRL-7PP Discrete Semiconductor Products

Allicdata Part #:

IRF1324STRL-7PPTR-ND

Manufacturer Part#:

IRF1324STRL-7PP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 24V 429A D2PAK-7
More Detail: N-Channel 24V 240A (Tc) 300W (Tc) Surface Mount D2...
DataSheet: IRF1324STRL-7PP datasheetIRF1324STRL-7PP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 19V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 24V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF1324STRL-7PP is Transistor is a three-terminal device that functions as a switch-like element. It completes the flow of the current or changes it. FETs are the most suitable electronics switches, equipped with unique characteristics, such as high-input impedance and wide operational temperature range, low power, and fast switching speed. IRF1324STRL-7PP is a Single, Enhancement-Mode Power MOSFET manufactured by Intersil.

The IRF1324STRL-7PP is the perfect choice for a vast range of applications such as switching power converters and amplifiers. It is designed to be used in automobiles, on-board electronic systems and more. The IRF1324STRL-7PP offers a standard VDSS (drain-source breakdown voltage) of 24V. It has a Low Rdson( drain-source on-resistance) of 7.6m Ω, meaning less power is consumed by the load and more energy is available for the load. The IRF1324STRL-7PP also features a very low gate-source leakage current of 0.5mA.

The working principle of the IRF1324STRL-7PP is simple. This Power MOSFET functions as a switch. Current flows between the source and drain when the gate voltage is above the threshold voltage. The absolute maximum voltage, also known as VGS (Gate to source voltage) ranges 0.5V to 6V, meaning that if the voltage applied between the gate and source exceeds 6V, the FET will be damaged.

When the voltage applied is between 0.5 and 0.7V the IDS (channel current) of the device will reach a maximum, meaning the load will draw the maximum current from the source. This is the most suitable state for switching loads. The IDS in this range, is known as saturation. When the voltage is more than the threshold voltage, a phenomenon known as \'body diode\' takes place, which allows a current to flow between the source and drain in one direction and blocks it in the other direction.

The IRF1324STRL-7PP Power MOSFET is ideal for use in switching applications, such as motor drives and power converters, amplifiers, and more. Its low on-resistance and high-input impedance allow it to handle large amounts of current, while consuming very little power. The operating temperature range of -55° C to+175° C makes this device ideal for a variety of automotive and on-board electronic applications.

The specific data is subject to PDF, and the above content is for reference

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