IRF1010ESTRR Allicdata Electronics
Allicdata Part #:

IRF1010ESTRR-ND

Manufacturer Part#:

IRF1010ESTRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 84A D2PAK
More Detail: N-Channel 60V 84A (Tc) 200W (Tc) Surface Mount D2P...
DataSheet: IRF1010ESTRR datasheetIRF1010ESTRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF1010ESTRR is a widely used power MOSFET that is typically used for high power switching applications. It is a single-channel type of power field-effect transistor (FET) that is often employed in switching power amplifiers, uninterruptible power supplies, motor control, and many other power applications. It is commonly used in applications that require high switching speed, low-power dissipation, fast turn-on/turn-off, and high reliability.

The IRF1010ESTRR is based on the MOSFET principle of operation. MOSFETs are three terminal devices with a source, a drain, and a gate. They are controlled by applying a voltage to the gate terminal, either positive to the source terminal or negative to the drain. This causes a channel between the source and the drain terminals, allowing current to flow. By controlling the voltage and the duration of the gate voltage, the current through the MOSFET can be precisely regulated.

The IRF1010ESTRR is a single-channel power MOSFET. It has a rated drain-source voltage of 100V, a continuous drain current of 10A, and a drain-source on-resistance of 1.2Ω. It also has a gate-source voltage of ±20V, an avalanche energy rating of 164mJ, and an on-resistance temperature coefficient of -55mΩ/°C. Other specifications and electrical characteristics can be found in the datasheet.

The IRF1010ESTRR has many advantages over other transistors and FETs. It has a much higher breakdown voltage, which allows it to handle much higher voltage and power than other devices. It also has a lower gate capacitance, enabling higher switching speeds and reduced power dissipation. Additionally, it operates with a low total gate charge, resulting in lower switching losses.

The IRF1010ESTRR is used in a variety of applications, including power backup systems, motor control, audio power amplifiers, power inverters, and other high-power switching applications. It is highly reliable, making it a preferred choice for mission-critical applications. Additionally, its low on-resistance and low gate capacitance make it suitable for high-frequency switching applications.

In summary, the IRF1010ESTRR is a single-channel power MOSFET with many advantages over other transistors and FETs. It is widely used in power backup systems, motor control, audio power amplifiers, power inverters, and other high-power switching applications. It has a high breakdown voltage, low gate capacitance, and a low total gate charge, making it suitable for high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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