IRF1104STRR

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The IRF1104STRR is a single field effect transistor that was produced by Infineon. The device is in a very small package, measuring 8 millimeters x 8-millimeters and is the latest version of Infineon’s lineup of Infineon Power MOSFET devices. Since its release, the IRF1104STRR has become a popular choice for a variety of applications that require great power efficiency and a low forward voltage.

The primary application fields for the IRF1104STRR are in High Voltage power supplies, Uninterruptable Power Supplies (UPSs), switching regulators, and motor drives. Additionally, this device works very well in low noise and low signal distortion applications, as well as applications requiring high reliability and fast switching.

The IRF1104STRR is designed to work within the range of -55°C to +175°C temperature and is suitable for flow and dip soldering. This device also has a maximum drain source voltage of 500V, a maximum drain current of 26A and a pulse width of 1μs.

Working with the IRF1104STRR, the primary working principle is the same as any MOSFET device. There is a gate that serves to control the drain, the source, and the body. By applying a voltage to the gate, the transistor will become conductive. The most common type of FET is the N-channel, which means that electrons will flow from the drain to the source when the gate is sufficiently energized. In the IRF1104STRR, a voltage of approximately 10 volts is required to turn on the device, and it will turn off when the gate voltage drops to 1.5V.

The IRF1104STRR device is designed with a low input capacitance and a very low gate-source resistance, giving it great linear performance over a wide range of power levels. The IRF1104STRR has a low gate charge, which allows them to have a fast switching and a low input capacitance. This allows them to have superior frequency response, granting greater control and lower losses when dealing with high power levels.

The IRF1104STRR is designed to work very quickly. When switching between on and off, they can do so with very fast switching speeds. This is due to its low input capacitance, which allows it to switch on and off quickly. It will also shut off quickly when the voltage is removed from the gate. This makes the IRF1104STRR an excellent choice for applications where switching speed and a low off-state current are important.

The IRF1104STRR also offers very good RDS(on) values, making them ideal for power applications. The low RDS(on) values ensure low losses when operating at high current levels and help keep the device from overheating, ensuring reliable operation. This makes the IRF1104STRR great for applications where power and thermal efficiency are important.

The IRF1104STRR offers many advantages, making it a great choice for many applications. Its small package size, low gate charge, high frequency response and low input capacitance all combine to make it a great choice for high-power, low-loss and low noise applications. Its RDS(on) values and fast switching speed also make it a great choice for power applications. The IRF1104STRR is a great choice for a wide variety of applications.

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