
Allicdata Part #: | IRF1010ESTRLPBFTR-ND |
Manufacturer Part#: |
IRF1010ESTRLPBF |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 84A D2PAK |
More Detail: | N-Channel 60V 84A (Tc) 200W (Tc) Surface Mount D2P... |
DataSheet: | ![]() |
Quantity: | 22400 |
1 +: | $ 0.65000 |
10 +: | $ 0.63050 |
100 +: | $ 0.61750 |
1000 +: | $ 0.60450 |
10000 +: | $ 0.58500 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3210pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF1010ESTRLPBF is a type of field-effect transistor (FET) specifically known as a single-packaged Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This transistor is a multi-purpose, highly efficient depletion-mode device used for switching and controlling various types of circuits. It is commonly used in power electronics, light lighting, audio amplifiers and motor control applications. The IRF1010ESTRLPBF is a low voltage and low current device that can be easily integrated into many types of circuits.
The IRF1010ESTRLPBF has an ultra low on-resistance, making it extremely efficient and capable of handling large currents. This makes it a popular choice for power switching applications. It also has a wide bandwidth and low noise levels, making it well-suited for audio amplifier designs. In addition, it has a maximum operating temperature of 175 degrees Celsius, making it suitable for use in high temperature industrial applications.
The main characteristic of IRF1010ESTRLPBF is its high input impedance and low output impedance. This allows it to regulate the voltage between the Gate and Drain and also to control the current flow between the Source and the Drain. The IRF1010ESTRLPBF is a depletion mode FET and its Gate must be biased negatively with respect to the Source in order for it to achieve the on state. When the Gate is biased positively, the device turns off.
In addition to the Gate and Source, the IRF1010ESTRLPBF also has a Source and Drain terminal. The Source is connected to the Ground while the Drain is connected to the load. The voltage between the Gate and Source determines the level of current that passes between the Source and the Drain. If the voltage is increased, the level of current passing between the Source and the Drain will also increase.
The IRF1010ESTRLPBF is a highly efficient transistor and it is commonly used in a wide range of electronic applications. It is often used to switch on and off large currents in power electronics, interfaces, and control circuits. It is also suitable for use in AC and DC applications, making it a very versatile device.
Overall, the IRF1010ESTRLPBF is an excellent choice for a wide range of applications due to its high efficiency, low noise characteristics, and wide temperature range. It is frequently used in power electronics, light lighting, audio amplifiers and motor control designs. Its high input impedance, low output impedance allow it to precisely regulate the voltage and current between the Source and the Drain.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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IRF1310NSTRLPBF | Infineon Tec... | -- | 13600 | MOSFET N-CH 100V 42A D2PA... |
IRF1010EZSPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 75A D2PAK... |
IRF1324STRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 24V 195A D2PA... |
IRF1503SPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 75A D2PAK... |
IRF1010EZLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 75A TO-26... |
IRF1310NSTRRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 42A D2PA... |
IRF1010ESTRLPBF | Infineon Tec... | -- | 22400 | MOSFET N-CH 60V 84A D2PAK... |
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IRF1010Z | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 75A TO-22... |
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IRF1607 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 75V 142A TO-2... |
IRF1104STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 100A D2PA... |
IRF1010ZS | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 75A D2PAK... |
IRF1404SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 162A D2PA... |
IRF1405ZSTRLPBF | Infineon Tec... | 0.94 $ | 1000 | MOSFET N-CH 55V 75A D2PAK... |
IRF1405ZLPBF | Infineon Tec... | -- | 1648 | MOSFET N-CH 55V 75A TO-26... |
IRF1018EPBF | Infineon Tec... | -- | 310 | MOSFET N-CH 60V 79A TO-22... |
IRF1324PBF | Infineon Tec... | -- | 1266 | MOSFET N-CH 24V 195A TO22... |
IRF1404L | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 162A TO-2... |
IRF1018ESLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 79A TO-26... |
IRF100B202 | Infineon Tec... | -- | 6000 | MOSFET N-CH 100V 97A TO-2... |
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IRF1104S | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 100A D2PA... |
IRF1407S | Infineon Tec... | -- | 1000 | MOSFET N-CH 75V 100A D2PA... |
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IRF1405STRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 55V 131A D2PA... |
IRF1010NPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 85A TO-22... |
IRF1302S | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 174A D2PA... |
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