
IRF1324STRLPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRF1324STRLPBFTR-ND |
Manufacturer Part#: |
IRF1324STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 24V 195A D2PAK |
More Detail: | N-Channel 24V 195A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7590pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.65 mOhm @ 195A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF1324STRLPBF device is a type of transistor, more specifically a MOSFET, short for Metal Oxide Semiconductor Field-Effect Transistor. It is categorized as a single-gate device, meaning it consists of only one gate. The IRF1324STRLPBF is designed for both analog and digital switching applications, and is particularly useful for the latter given its low on-resistance. This low resistance allows it to efficiently switch high current with low heat dissipation and voltage drop.
The IRF1324STRLPBF is constructed using a P-channel MOSFET, which consists of three parts: the source terminal (S), the gate terminal (G), and the drain terminal (D). The source is the common reference point between the gate and drain and the application of an electric charge to the gate terminal causes current to flow between the drain and source terminals. This effect is known as carrier modulation in semiconductor devices, where a charge (or electron) is used to attract or repel tdom other electrons.
The IRF1324STRLPBF MOSFET also has a threshold voltage—a voltage that must be applied to the gate in order to turn the switch “on” and allow current flow from the drain to the source. This ‘threshold’ voltage varies depending on the application and can be higher or lower depending on the device’s construction and design. The IRF1324STRLPBF has a low threshold voltage, which is useful for digital applications where low voltages are used for switching.
When the IRF1324STRLPBF is used with a motor driver, the motor driver controls the supply voltage to the motor. When the motor is started, the gate voltage is increased until it reaches the gate threshold voltage. At this point, the source and drain supplies the required current to the motor. As the motor continues running, the voltage applied to the gate is decreased, causing the channel to remain fully open. This cycle is then repeated, allowing the motor to move at a constant speed.
IRF1324STRLPBF is also used in various industrial applications, such as automations and robotics. In these situations, the MOSFET is used to control the rate of speed and direction of a device’s movement by controlling the supply voltage to the motor. As an example, the MOSFET can be used to control the speed and direction of a conveyor belt in an automated manufacturing line. In this case, the gate voltage is applied to the motor, causing the conveyor to move at a specific speed and in a particular direction.
The IRF1324STRLPBF is an extremely versatile device and can be used in a variety of applications. With its low on-resistance and low threshold voltage, it is suitable for both analog and digital switching applications, making it a great choice for industrial and robotic applications.
The specific data is subject to PDF, and the above content is for reference
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