IRF40B207 Allicdata Electronics
Allicdata Part #:

IRF40B207-ND

Manufacturer Part#:

IRF40B207

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 95A TO-220AB
More Detail: N-Channel 40V 95A (Tc) 83W (Tc) Through Hole TO-22...
DataSheet: IRF40B207 datasheetIRF40B207 Datasheet/PDF
Quantity: 2610
1 +: $ 0.90000
10 +: $ 0.87300
100 +: $ 0.85500
1000 +: $ 0.83700
10000 +: $ 0.81000
Stock 2610Can Ship Immediately
$ 0.9
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Series: HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 57A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRF40B207 is an N-Channel enhancement mode MOSFET, one of a range of power MOSFETs manufactured by Infineon. This device is best suited for medium to high voltage applications and relatively low current applications.

The IRF40B207 is an N-Channel MOSFET, which makes it an ideal choice for use in switching and amplifying applications. It is a power MOSFET, meaning it can handle larger current and voltage loads than regular MOSFETs. With its low on-state resistance, low gate charge and low voltage drop, it is suitable for high frequency applications. It also features a high input impedance, high output impedance and low turn on time.

The IRF40B207 is commonly used in switching power supplies, home appliances, motor control, lighting, LED lighting and motor control applications. Due to its low on-state resistance and high input impedance, the IRF40B207 is also an ideal choice for use in power amplifiers, voltage regulators, motor drivers, voltage regulators and power supplies. In addition, its low on-state resistance, high output impedance and low turn on time make it suitable for use in high frequency applications such as switching power supplies and motor control.

The IRF40B207 operates in the enhancement mode which means no separate gate bias is required. When the base voltage is applied, this MOSFET turns on and begins to conduct. The current flow is controlled by the voltage applied to the gate and the channel resistance between the source and drain. The device is capable of sustaining high voltages, so it is suitable for use in high voltage switching applications such as home appliances and motor control.

The IRF40B207 also features a low input capacitance which reduces switching losses and EMI noise. Additionally, it has a low gate charge, making it ideal for use in high frequency switching and amplifier applications. Finally, the device also has an excellent threshold voltage and low drain-source leakage, resulting in improved efficiency and longer device life.

In summary, the IRF40B207 is an excellent choice for both switching and amplifying applications. Its low on-state resistance, high input impedance and low gate charge make it suitable for high frequency applications, while its low input and output capacitances reduce losses and EMI noise. Thus, the IRF40B207 is an ideal choice for use in switching power supplies, home appliances, motor control, lighting, LED lighting and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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