IRF40H210 Discrete Semiconductor Products |
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Allicdata Part #: | IRF40H210TR-ND |
Manufacturer Part#: |
IRF40H210 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 100A PQFN5X6 |
More Detail: | N-Channel 40V 100A (Tc) 125W (Tc) Surface Mount 8-... |
DataSheet: | IRF40H210 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.7V @ 150µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5406pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 152nC @ 10V |
Series: | HEXFET®, StrongIRFET™ |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF40H210 MOSFET is a high voltage, high current device equipped with all the features and benefits required for high speed switching. It is able to provide up to 2A of continuous drain current, and up to 5A of intermittent drain current. The MOSFET is capable of switching at a maximum rate of 250MHz.
The IRF40H210 MOSFET is an ideal choice for high current and high voltage applications. It can be used to control the power delivered to a load, to switch on and off loads, or to regulate motor speed. It is also suitable for various forms of electronic equipment, including remote-controlled electronic devices, toy motors, and DC motor control.
The IRF40H210 MOSFET has a breakdown voltage of 40V and a drain-source on-resistance of 0.27Ω. It features an electrostatic discharge protection of up to 2000V, protecting the device from potentially damaging overvoltage surges.
The IRF40H210 MOSFET operates in three modes – Cut-Off, Active, and Linear. In Cut-Off mode, the device is turned off, with no current flowing through the drain-source channel. In Active mode the MOSFET is turned on and a current flows through the drain-source channel according to the magnitude of the gate voltage. In Linear mode, the MOSFET is biased so that the drain-source voltage can be adjusted by changing the magnitude of the gate voltage.
The IRF40H210 MOSFET includes a body diode, which is used to protect the device from forward voltage surges. The body diode allows the current to flow in the reverse direction, thus allowing the MOSFET to be used for voltage clamping applications. The body diode also acts as an intrinsic protection from voltage transients.
The IRF40H210 is also equipped with a high immunity against electrostatic discharge (ESD) and ionic contamination, providing greater reliability and improved performance. The MOSFET also uses less power than competing devices, making it an energy-efficient choice.
Thanks to its combination of features, such as its low on-resistance, wide operating range, fast switching speed, and high voltage rating, the IRF40H210 MOSFET is an excellent choice for a wide range of applications, including switch-mode power supplies, motor control, power line isolation, and lighting control.
The specific data is subject to PDF, and the above content is for reference
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