Allicdata Part #: | IRF4905SPBF-ND |
Manufacturer Part#: |
IRF4905SPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 42A D2PAK |
More Detail: | P-Channel 55V 42A (Tc) 170W (Tc) Surface Mount D2P... |
DataSheet: | IRF4905SPBF Datasheet/PDF |
Quantity: | 14608 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 42A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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An IRF4905SPBF is a type of insulated-gate bipolar transistor (IGBT) known as an n-channel, enhancement-mode device that is utilized in a variety of applications. It is important to note that while IGBTs are configured similarly to FETs, they combine the properties of both bipolar transistors and FETs. Common applications of the IRF4905SPBF include solar power inverters, welding, motor control, AC and DC drives, UPS, and voltage regulation.
To understand the working principle of an IRF4905SPBF, it is important to look at the components of this part. At the core of the device is a metal oxide semiconductor field-effect transistor (MOSFET). This is an n-channel device, meaning that current flows from the source to the drain when a positive voltage is applied to the gate. Additionally, the MOSFET element is designed with a silicon-controlled rectifier (SCR) and a gate resistor, which allow for higher-current gate drive and reduce gate capacitance.
To control the current flow through the transistor, the gate-source voltage (VGS) needs to be increased. Depending on the application, the gate drive is provided by a special driver circuit or micro controller. The driver circuit supplements the small voltage provided by the controlling transistor, which allows for larger currents to flow.
Of equal importance to the operation of the IRF4905SPBF is the packaging of the part. This device is available in an industry-standard SOIC-8 package, which is hermetically sealed to protect its components from dust, moisture, dirt and other particles. The protective packaging also ensures that the part remains intact despite being exposed to extreme temperatures and other harsh environmental conditions.
Due to the efficient power handling, fast switching times and robust packaging, the IRF4905SPBF is an ideal choice for applications such as switching power supplies, DC-DC converters, general-purpose amplifiers and high-side switching. Additionally, its ability to withstand harsh environmental conditions make it a suitable choice for use in car audio, cell phones, consumer electronic devices and other products.
In conclusion, the IRF4905SPBF is an n-channel enhancement-mode insulated-gate bipolar transistor that has a variety of applications. By combining the properties of MOSFETs, bipolar transistors and SCRs the device can efficiently handle higher current gate drives. Furthermore, the hermetically sealed SOIC-8 packaging ensures the part can withstand extreme environmental conditions. Therefore, the IRF4905SPBF is an ideal choice for switching power supplies, DC-DC converters, general-purpose amplifiers, high-side switching, car audio and other consumer electronic applications.
The specific data is subject to PDF, and the above content is for reference
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