IRF4104S

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IRF4104S is an N-Channel Enhancement Mode Enh Signal MOSFET that available in surface mount package, which can be applied in a wide variety of applications, covering signal processing to power control, including Class-D audio amplification, level shifting, and signal conditioning.

IRF4104S comes with a 5.6 mΩRDS(on) and 6.21A @10VID. Besides, it provides lower gate charge Qg and higher maximum current rating than the similar size competitors, thus achieving great performance and power density. Due to its Pb-free, halogen-free and RoHS compliant package, it is perfect for material reduction and harsh environment applications.

The working principle of IRF4104S is based on the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). As a general type of semiconductor device, MOSFET relies on the electric field to have its electronic conduction function. It consists of four terminals: a source, a drain, a gate and a body. The source and drain are the four electrodes that the electric current is flowed through them. The gate controls the source and drain connection by voltage, which can cutoff or turn channel "ON" to uniformly control the electric current.

The work of IRF4104S is that it can be turned "ON" or "OFF" by voltage applied to its gate. Depending on the application, the signal applied to the gate can either be analog or digital. When it is "ON", current can pass through the source and drain; while it is "OFF", no current allowed to pass between the source and drain. Therefore, it provides excellent logic level control and maximizes efficiency when used in Class-D audio amplifiers, level shifting and signal conditioning.

When it is working, it also need to be taken into account the thermal performance. If the device works in such environment where the temperature rises, the cause would be large output power from Class-D amplifiers and/or small copper area in PCB designs. Therefore, IRF4104S is able to handle the temperature rise and improve the thermal performance due to its perfect package design.

In conclusion, IRF4104S is an N-Channel Enhancement Mode Enh Signal MOSFET that has great performance and power density, perfect packaging, and excellent logic level control that is applicable in numerous applications ranging from signal processing to power control. It can be turn "ON" or "OFF" by voltage applied to its gate, which allows controllability of the electric current. To optimize the thermal performance and to ensure it is able to handle high output power, it is important to take into account the thermal performance of the device.

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