Allicdata Part #: | IRF4905LPBF-ND |
Manufacturer Part#: |
IRF4905LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 42A TO-262 |
More Detail: | P-Channel 55V 42A (Tc) 170W (Tc) Through Hole TO-2... |
DataSheet: | IRF4905LPBF Datasheet/PDF |
Quantity: | 3300 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 42A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF4905LPBF is a specific type of single field effect transistor (FET) which is widely used in the electronics industry. It is part of the IRF4905LPBF line of FETs from International Rectifier Corporation (IR) and is characterized by a low-resistance, low on-state resistance, high-frequency operation, wide dynamic range and reverse-bias immunity.
The IRF4905LPBF is a surface-mount transistor with a 20V drain-source voltage rating and a minor current-voltage curve. It is commonly used as an amplifier in low-voltage, high-frequency applications such as mobile phones, GPS systems, and car audio systems. The device has a very low drain-source on-resistance and does not suffer from bias reversal. Its gate threshold is also lower than the typical gate threshold of other single FETs.
The IRF4905LPBF is a N-channel FET and operates using the principle of MOSFET action. That is, when an electrical signal is applied to its gate, the FET will switch and allow current to flow from its source to the drain. The exact amount of current that the device can carry and the characteristics of the current-voltage curve is determined by the design of the FET. This type of FET is usually constructed with an insulated gate electrode, which is isolated from the source and drain, so that it can be used as a switch with very low power loss. The IRF4905LPBF is one of the most efficient FETs available and is capable of carrying up to 20A of current. The device also has high noise immunity and a wide operating temperature range.
The IRF4905LPBF is used in a variety of applications, ranging from power supplies and power amplifiers, to motor control and LED lighting. It is especially well suited for high-efficiency power conversion, as it has low drain-source on-resistance and low capacitance. Since the device can operate at high frequencies, it is ideal for in-line power control and can be used to switch high-power loads without generating significant power losses. Additionally, the design of the device makes it highly immune to noise, making it especially useful in applications where the system must be able to cope with external interference.
In summary, the IRF4905LPBF is a sophisticated single FET designed to provide low power loss, high current-carrying capacity, and high-frequency operation. This device is especially well-suited to applications where power efficiency and noise immunity must be balanced, such as in power supplies, motor control and LED lighting.
The specific data is subject to PDF, and the above content is for reference
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