IRF4104PBF Allicdata Electronics
Allicdata Part #:

IRF4104PBF-ND

Manufacturer Part#:

IRF4104PBF

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 75A TO-220AB
More Detail: N-Channel 40V 75A (Tc) 140W (Tc) Through Hole TO-2...
DataSheet: IRF4104PBF datasheetIRF4104PBF Datasheet/PDF
Quantity: 145
1 +: $ 1.34000
10 +: $ 1.29980
100 +: $ 1.27300
1000 +: $ 1.24620
10000 +: $ 1.20600
Stock 145Can Ship Immediately
$ 1.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRF4104PBF is a highly efficient type of insulated gate bipolar transistor (IGBT), which is a three-terminal power semiconductor device used in controlling and switching power. It is a floating-channel type of MOSFET, made up of two opposing power MOSFETs and one connection for an insulated gate. It combines the benefits of a voltage controlled MOSFET with the output characteristics of a bipolar transistor. The physical size of the IRF4104PBF is also small, making it an ideal choice for applications in high-efficiency power systems, such as motor drives and lighting.

In applications where a large amount of power needs to be managed, the IRF4104PBF can provide for more efficient operation and lower heat dissipation. When used in motor drives, for example, the IGBT can reduce heat generated due to high frequency switching, as well as reduce power used while switching. It can also reduce voltage stresses on the motor, thereby increasing its longevity.

The IRF4104PBF also has several features that make it a good choice for power applications, such as high-voltage ratings, low-saturation voltage, low gate charge, long-term reliability and wide temperature range. With its high breakdown voltage and low Rth(DSS) characteristics, it can also be used in high-current power switch applications.

The working principle of the IRF4104PBF is based on the MOSFET operation. It consists of two effective electric charges, the majority charge and the minority charge. When the gate voltage is applied, the majority charge carriers are pushed away from the gate, creating a depletion region. At this point, current is able to flow through the channel and the drain source terminals, thus allowing power to be switched on and off. The size of the depletion region is determined by the gate voltage, allowing the device to be controlled.

By adjusting the gate voltage, the IRF4104PBF can be used as a switch, allowing a current to pass or blocking it. It can also be used as a voltage-regulator, which affects the output voltage by controlling the current through the device. This can be used in applications such as in power supplies, where the output voltage needs to be regulated.

The IRF4104PBF is a versatile device and can be used in various applications such as motor drives, lighting, interfaces, power supplies, and many other power systems. Its highly reliable construction and wide temperature range make it an ideal choice for powering high-efficiency power systems, and it has quickly become a popular device in the industry.

The specific data is subject to PDF, and the above content is for reference

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