IRF4104L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF4104L is a type of insulated gate field-effect transistor (IGFET) characterized by low on-resistance, fast switching speed and low gate drive power. The IRF4104L is designed for high-speed power switching applications requiring very low on-resistance. This device can handle peak currents of up to three amps, making it ideal for use in high-power switching applications.

In order to understand the workings of the IRF4104L, let us first look at the structure of a field-effect transistor. A field-effect transistor is basically a three-terminal semiconductor device. The three terminals are the drain, the source, and the gate. The gate is the control terminal and when voltage is applied to it, the current between the source and drain terminals is changed accordingly.

In an IGFET, there is an insulating layer which separates the gate from the channel. This layer is what gives the device its insulation characteristics and provides the means by which the device can be current or voltage controlled. The insulating layer is usually a material such as silicon oxide or silicon nitride.

In the case of the IRF4104L, the device is fabricated using a specific process using silicon dioxide. It has a drain-source breakdown voltage of 100V with a Gate Threshold Voltage of 2.5V. The device is available in both through-hole and surface mount versions.

The working principle of the IRF4104L is the same as other field effect transistors. When a voltage is applied to the gate, a current between the source and drain is allowed to flow. The current is controlled by the amount of voltage applied to the gate, thus allowing current to be controlled very accurately. In addition, the drain-source breakdown voltage makes the device suitable for use in high-voltage applications.

The IRF4104L has many applications in high-speed power switching. It is commonly used in motor control applications, switching power supplies, and battery charging applications. The device can also be used in laptop and mobile phone applications where fast switching and lower power consumption is desired. Additionally, the device is capable of handling high-frequency oscillations which makes it suitable for use in communications systems.

In summary, the IRF4104L is an insulated gate field-effect transistor which is characterized by low on-resistance, fast switching speed and low gate drive power. It has a wide range of applications in high-speed power switching and is capable of handling high-frequency oscillations which makes it suitable for use in communications systems. This device is available in both through-hole and surface mount versions.

The specific data is subject to PDF, and the above content is for reference