IRF4104SPBF

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IRF4104SPBF is an advanced trench technology Silicon N-Channel Power Field Effect Transistor (FET) designed for switching applications. It is manufactured in the standard TO-220AB package, with a source and drain that are electrically isolated from its metal tab for easy connection with other circuitry. IRF4104SPBF transistors feature small on-resistance, low threshold voltage, good thermal stability and ESD protection.

The most common application field for an IRF4104SPBF is switching between two voltages. In this application, the transistor acts as a switch, turning power on (when the voltage at the gate exceeds the threshold voltage of the transistor) and off (when the voltage at the gate is below the threshold voltage). One example of such an application is a light switch, where the transistor is used to switch the power for a light bulb on or off.

The working principle of the IRF4104SPBF is the same as other power MOSFETs. It is based on the movement of electrons across the PN junction region, governed by the voltage at the gate. The current between the source and drain is limited by the resistance of the depletion layer created at the PN junction region when the gate voltage exceeds its threshold voltage. As this resistance is much lower than that of the gate, the voltage drop across the FET will be less than the voltage applied to its gate.

When the gate voltage is increased, the current between the source and the drain increases due to a decrease in the resistance between them. The transistor is then said to be in the “saturated” state, and it can pass relatively large currents from the source to the drain. This is the mode used for switching applications. On the other hand, when the gate voltage is reduced to a value lower than its threshold voltage, the voltage between the source and the drain will be cut off, effectively stopping any current from flowing between them. This is called the “off” state, and it is used for turning the transistor off in switching applications.

The IRF4104SPBF is a high-performance transistor, capable of switching very large currents with good thermal stability and ESD protection. It is an ideal choice for switching applications that require high current capacity as well as good thermal stability and ESD protection. With its small on-resistance and low threshold voltage, it is also a good choice for low voltage, high frequency switching applications.

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