IRF7325PBF

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The IRF7325PBF, developed by International Rectifier Corporation, is a MOSFET pass transistor array that features a high, datasheet defined power dissipation capacity and low on- resistance. It contains several enhancement-mode MOSFET transistors in a single package, which allows for a regulated current to be regulated without a separate control IC to provide voltage and current control. This device can be used in a variety of applications, ranging from driving high-power fan motors to providing amplified power switching in high-current circuits.

The IRF7325PBF is a two-transistor, dual-gate array featuring two conductors, a source and a drain. A gate signal is applied to one of the devices in the transistor array to open or close the source-drain path, thus allowing or preventing current flow. In the device, two P-channel MOSFETs are used to control current flow, while the two N-channel MOSFETs are used to provide access to the voltage at either end of the source-drain path. This allows for the current regulation of the high-power motor or the buffering of the amplified power switching.The IRF7325PBF is an ideal device for applications requiring a wide range of operating conditions including low on-resistance, high power dissipation capability and a parallel-source/drain configuration. It is commonly used in consumer electronics, industrial automation, and other high-power applications. The device provides efficient current regulating capabilities in an array form factor which can save space and reduce the number of components needed for a given circuit.

The device features a maximum continuous drain current of 10 A and an on-resistance of 8.5 V, making it suitable for operating in a wide range of current and voltage situations. It also features a maximum drain voltage of 20 V and a total gate charge of 20 nC, allowing it to be used in circuits requiring large amounts of power switching. Furthermore, the device has a maximum avalanche energy of 110 mJ and a drain-gate withstand voltage of 30 V, providing a measure of protection against power surges.

The IRF7325PBF works on the principle of MOSFET pass transistor arrays. Enhancement mode MOSFET transistors are connected in parallel and a gate signal is applied to one or both of the devices in the array in order to open or close the source-drain path. This operation allows or prevents current through the source-drain path, thus regulating current in the desired direction. The two P-channel transistors are used to provide access to the voltage at either end of the source-drain path, while the two N-channel transistors are used to control current flow. The device can be used to supply a constant current to various circuits or to provide amplified power switching in high-current applications.

The IRF7325PBF is a reliable, cost-effective solution for applications requiring a high power dissipation capacity, low on-resistance, and a parallel-source/drain configuration. It is suitable for use in a variety of applications, ranging from driving high-power fan motors to providing amplified power switching in high-current circuits. The device features a wide range of operating conditions, making it suitable for a variety of applications.

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