IRF7820PBF Allicdata Electronics
Allicdata Part #:

IRF7820PBF-ND

Manufacturer Part#:

IRF7820PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N CH 200V 3.7A 8-SO
More Detail: N-Channel 200V 3.7A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7820PBF datasheetIRF7820PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 78 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
FET Feature: --
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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The IRF7820PBF is a -20 volt, N-Channel power field effect transistor designed for use in applications that require high speed switching; it is a single enhancement type MOSFET. The IRF7820PBF is designed for applications such as electronic motor control, DC-DC converters, switching power supplies, audio amplifiers and other power control applications.

Working principle
The IRF7820PBF is an enhancement mode N-Channel MOSFET and is a voltage controlled device. The gate of the device is coupled to the substrate; when a positive voltage is applied to the gate, a conducting channel is formed between the source and the drain. The current in the channel is determined by the applied voltage and by the impedance of the load.

When no voltage is applied to the gate, the MOSFET is off; the resistance between the source and the drain is very high. As the voltage on the gate increases, the resistance between the drain and the source decreases until it reaches a very low value. At this point, the device is said to be in the saturation region, that is, the current will remain constant for any further increase in the gate voltage.

Applications
The IRF7820PBF is a highly efficient device and is used in a wide range of applications, including motor control applications, switching power supplies, DC-DC converters and audio amplifiers.

The device is suitable for applications that require high switching speed, such as motor control, power supply switching and drive switches. The device is also suitable for audio amplifiers, as it is capable of operating in both pulsed and continuous mode.

The IRF7820PBF also has very low on-state resistance, which makes it suitable for use in DC-DC converter applications, as the low on-state resistance ensures low power losses. The high switching speed of the device makes it suitable for use in power control applications, as fast switching speeds are required in order to avoid overshoot or ringing.

In addition to its application in high speed switching, the IRF7820PBF is also used in low frequency applications such as pulse width modulation (PWM) controllers. The device can also be used in high power audio amplifiers, as the device can handle high power without generating a lot of heat.

The IRF7820PBF is a versatile device which is suitable for a wide range of applications. The device has a wide operating voltage range, high efficiency and low on-state resistance, making it suitable for use in applications that require high switching speed and high current handling capability.

The specific data is subject to PDF, and the above content is for reference

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