IRF7799L2TRPBF

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IRF7799L2TRPBF is a single-gate field-effect transistor (FET) designed and developed by ON Semiconductor. It is a versatile device used to control current and voltage in various electrical and electronic circuits. The IRF7799L2TRPBF is a single source/drain N-channel enhancement type FET. It is ideal for use in low-frequency applications such as instrumentation, sensing, switching, amplifier, or power management applications. The device features low on-state resistance, low gate charge, low threshold voltage, and fast switching capabilities.

Key Features and Benefits

• Low on-state resistance (R_DS(ON))
• Low gate charge
• Low threshold voltage
• Fast switching capability
• Operating temperature range of -55°C to 150°C

Applications

• Instrumentation
• Sensing
• Switching
• Amplifier
• Power management

Structure and Working Principle

A single-source/drain FET is a type of transistor in which the source/drain terminals are directly connected to each other, forming a single source/drain node. This type of FET has a single bulk terminal between the source and drain. It works following the same principle as a standard MOSFET, with a source, a drain and a gate electrode. When a positive voltage is applied to the gate, a channel is created between the source and drain, allowing current to flow from source to drain. The gate voltage can be used to control the current flow, i.e. the higher the voltage, the higher the current. The device will only allow current flow when voltage is applied to the gate. This type of FET is widely used for sensing, switching and amplifier applications.

Specifications

The IRF7799L2TRPBF has a maximum drain-source voltage of 40V and a maximum drain current of 4A. It is rated for an operating temperature range of -55°C to 150°C. The device also features a low gate-source voltage of 0.3V and a maximum gate-source voltage of 7V. The on-state resistance of the device is typically 6.5 mΩ.

Conclusion

The IRF7799L2TRPBF is a versatile, low-frequency FET with a low on-state resistance, low gate charge, low threshold voltage, and fast switching capability. It is suitable for a wide range of instrumentation, sensing, switching, amplifier, and power management applications. It is rated for a maximum drain-source voltage of 40V, a maximum drain current of 4A, and a maximum operating temperature of 150°C. The device has a low gate-source voltage of 0.3V and a maximum gate-source voltage of 7V. The on-state resistance of the device is typically 6.5 mΩ.

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