Allicdata Part #: | IRF7351TRPBFTR-ND |
Manufacturer Part#: |
IRF7351TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 60V 8A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 8A 2W Surface ... |
DataSheet: | IRF7351TRPBF Datasheet/PDF |
Quantity: | 2020 |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Base Part Number: | IRF7351PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 1330pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 17.8 mOhm @ 8A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Drain to Source Voltage (Vdss): | 60V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF7351TRPBF is a Dual N-Channel PowerTrench® MOSFET Array. It is typically used for gate driving, level shifting and voltage protection applications. It can also be used for high power motor control, power supply, lighting and audio amplifier applications. The IRF7351TRPBF is housed in a small surface mount package, which helps reduce board space and improves reliability.
The IRF7351TRPBF is a MOSFET array composed of two N-Channel MOSFETs, each with a separate gate. It is designed to offer the highest performance levels and reliability in different applications. It can be used as either a standard MOSFET array or as a gate driver, depending on the application. It has a wide operating range, from -55 °C to +200 °C, and is designed to provide superior reliability, heat dissipation and EMI/RFI protection.
The IRF7351TRPBF is a MOSFET array with two N-Channel devices. Each device has its own gate, enabling effective level shifting and voltage protection for a wide range of applications. The two MOSFETs in the array can be used either as standard MOSFETs, or as gate drivers, depending on the application. As MOSFETs, they can offer high speed switching, low power dissipation, and low on-resistance. As gate drivers, they can provide switching rates up to one nanosecond, enhanced protection for the power switch, and superior EMI/RFI protection.
The IRF7351TRPBF provides superior EMI/RFI protection thanks to its dual gate design. This allows high frequency components to be effectively countered by keeping them at high frequencies while they are propagating through the array. This helps to reduce the amount of EMI/RFI present in the application, increasing the system’s reliability. In addition, the array is designed to reduce peak switch current, allowing a higher duty cycle and higher efficiency.
The IRF7351TRPBF is ideal for gate driving, level shifting and voltage clamping applications, making it an ideal choice for high power motor control, power supply and lighting applications. It is also suited for audio amplifier applications, providing superior performance and reliability. In addition, the array’s small size and low power dissipation characteristics make it an ideal solution for portable and handheld applications.
The IRF7351TRPBF is a dual N-Channel PowerTrench® MOSFET array that is ideal for gate driving, level shifting and voltage protection applications. It features two independent N-Channel MOSFETs, which can be used either as traditional MOSFET devices or as gate drivers, depending on the application. It provides superior EMI/RFI protection, low power dissipation, high switching speeds and high reliability, making it ideal for a wide range of applications. The IRF7351TRPBF is available in a small surface mount package, allowing for increased levels of reliability and a reduction in board space.
The specific data is subject to PDF, and the above content is for reference
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