IRF740STRLPBF

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IRF740STRLPBF, developed by International Rectifier, is a 100 V N-Channel HexFET Power MOSFET optimized with a very low rDS(on). This product is specially designed for complex digital systems and switch mode power supplies, and it is encased in a surface mount package. It features low gate charge and drain-source on-state resistance. As the first HEXFET product with a static threshold voltage of 4V, IRF740STRLPBF has become a popular choice for many electronic projects due to its functional integration and low power consumption.

Application Field

IRF740STRLPBF is widely used in various commercial and industrial applications. Firstly, it can serve as a general purpose MOSFET, used to switch loads ranging from a few mA up to several hundred amps. The device has found popular uses in motor control, lighting control, solenoid control and many other applications. Secondly, due to its low rDS(on) and low on-state resistance, the device is used for synchronous and asynchronous rectification, power supply design, power transfers and conversion and many other power management applications.

In addition, IRF740STRLPBF can also be used for digital systems and switch mode power supplies, such as the supervisory and control devices for UPS, motor control, and other switched mode power supplies. For example, the device is well suited for delay control, current limit level shifters, frequency converters, and on/off control. The device also has good immunity against electrical surge, making it suitable for high frequency applications.

Working Principle

As a MOSFET, IRF740STRLPBF uses the three-terminal source-gate-drain structure to control current flow. The device operates with a relatively low voltage at the source terminal and requires only a small amount of energy to switch the device states. When the gate voltage is greater than the source voltage, the device is considered to be on and the drain current is flowing, otherwise the device is in the off-state or cut-off mode. The current flow is regulated through the adjustment of the gate voltage.

The working principle of IRF740STRLPBF relates to its physical structure. A thin oxide layer is employed to cover the silicon structure, allowing a small voltage to control the current flow. This thin oxide layer acts as a gate dielectric, allowing the gate to control the current flow. However, the current rating of the device is largely dependent on the drain-source voltage and gate-source voltage features.

IRF740STRLPBF is available in a variety of packages, including a surface mount package. The device has excellent failure-protection features, good thermal performance, and a wide operating temperature range. This makes the device suitable for most applications. Its relatively low power consumption, combined with high reliability and easy assembly, make it an ideal choice for many electronic projects.

Conclusion

IRF740STRLPBF is an affordable, efficient and reliable 100V N-Channel HexFET Power MOSFET product developed by International Rectifier. It is widely used in various commercial and industrial applications, including synchronous and asynchronous rectification, power supply design, power transfer and conversion, digital systems and switch mode power supplies, motors, and lighting control. The device utilizes gate control in order to regulate the current flow, and a source terminal and gate voltage used to switch the device on and off. It also offers a wide operating temperature range and relatively low power consumption.

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