IRF7805ATR

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	11 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	4.5V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The IRF7805ATR is a single-MOSFET N-channel transistor which is a critical part of any electrical system requiring the switching of an electrical load in order to control the flow of current.When used in a circuit, the IRF7805ATR is operated by applying a voltage between the gate and source pins, which essentially turns the transistor on and off according to the principle of the metal-oxide-semiconductor field effect (MOSFET). In this way, it creates a channel through which the current can flow from the drain pin to the source pin, making the transistor in effect an electrical switch.The IRF7805ATR has a range of practical applications in various industries, but its most common use is in power control and regulation, due to its highly efficient operation and low on-resistance. Its ability to rapidly switch current on and off makes it very useful for applications such as motor control, power amplifiers, and voltage regulators.The IRF7805ATR is a great choice for these applications due to its high current-carrying capacity, low on-resistance, low gate-source voltage, and excellent switching characteristics. The small size of the package also makes it perfect for applications in which space is at a premium. Furthermore, the on-resistance can be further reduced by increasing the gate-source voltage.The IRF7805ATR operates using the intrinsic body diode (IBD) of the MOSFET. This is an important feature of the transistor, as it allows the device to switch quickly and accurately between two states, providing a reliable, efficient switching solution.In addition, the design of the IRF7805ATR makes it ideal for systems which require quick response times and high resolution. This is due to its low switching threshold voltage and its low leakage current. The low switching threshold voltage also helps to limit the amount of power wasted by the circuitry, making it more efficient.The IRF7805ATR is easy to use and requires minimal support hardware, making it an ideal choice for many applications. The low on-resistance and the high current-carrying capacity of the device make it suitable for a wide range of power applications. In conclusion, the IRF7805ATR is a single-MOSFET N-channel transistor with a range of practical applications in various industries. It is highly effective for power control and regulation solutions due to its excellent switching and current flow characteristics, and its low on-resistance and low gate-source voltage make it an ideal choice for applications where space is at a premium.

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