IRF7807VD2

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IRF7807VD2 is a Power MOSFET (metal oxide semiconductor) from International Rectifier, a subsidiary of Infineon Technologies in Motor Control and Automotive markets. It is a single N-channel Power MOSFET, the “VD2” denoting the second generation of this device type.

The IRF7807VD2 is structured from Silicon as a vertical field-effect transistor (VFET) with a planar gate and a double offset source. This VFET construction is used to achieve high gain, fast switching and improved temperature stability, allowing the FET to switch faster than a conventional MOSFET. The IRF7807VD2 offers a low rdson, which is attractive for applications that need to dissipate low power.

Application Field

The IRF7807VD2 is used in several applications including solar panel controllers, power supplies, motor drives, lighting control and more. Examples of specific applications include laptop battery chargers, power inverters, power switching solutions, automotive sensors, AC/DC controllers, motor drive systems and more.

The low output capacitance of the IRF7807VD2 provides an excellent supply for high-speed applications. The chip is built on the TSOP-8 package, which is an optimized design for high performance, providing a high degree of electrical isolation and stable operation over a wide range of temperatures.

Working Principle

The IRF7807VD2 is a standard N-channel MOSFET, meaning that when the gate voltage is higher than the source voltage, the device is “on” and allows current to flow from the source to the drain.

The IRF7807VD2 is designed to be a low-power, high-efficiency switching device. It features a low on-state resistance and low gate capacitance, which results in low power dissipation and low switching losses. It also features a flat current-voltage curve, making it suitable for use in high frequency switching applications as well.

The chip has a breakdown voltage of 32V, with an avalanche current rating of 15 A. The device can handle an average current of 8 A, with peak current of 16A. The maximum allowable drain-source voltage is 100V.

The device also has a low gate-source leakage current, allowing for improved power efficiency in critical applications. It is protected against parasitic biasing which may lead to false triggering of the circuit.

The IRF7807VD2 also has a fast switching time, with a rise and fall time of 50ns and 233ns respectively. This makes it a suitable device for high-speed applications, such as notebook computers and other consumer electronics. It has a maximum drain-source impedance of 5.2 ohms and a max. drain-source saturation voltage of 1.5V.

The IRF7807VD2 is a versatile, low-power device, suitable for applications ranging from motor control to consumer electronics. Its low power dissipation, fast switching, and low gate leakage current make it an ideal choice for a wide range of applications.

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