IRF7240TR Allicdata Electronics
Allicdata Part #:

IRF7240TR-ND

Manufacturer Part#:

IRF7240TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 40V 10.5A 8-SOIC
More Detail: P-Channel 40V 10.5A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7240TR datasheetIRF7240TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 15 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF7240TR is a single field effect transistor (FET) specifically designed for applications that call for high current load switching. It is an N-Channel enhancement-mode device, meaning that it operates by increasing current flow through the transistor in response to a positive gate-source voltage.

The FET operates in two different modes or states: enhancement mode and depletion mode. In enhancement mode, a small amount of electric current will flow through the FET if a positive bias is applied to the gate of the FET. This current, however, is limited by the threshold voltage of the FET, which is set when designing the device. When the voltage applied to the gate exceeds the threshold voltage, the FET is said to be in its enhancement mode and it can pass much larger currents based on the drain-source voltage.

The IRF7240TR is designed as an N-Channel enhancement-mode FET, which means that it will respond to a positive gate-source voltage by increasing the current flow through the transistor. This can be used to switch a higher current load. The device has a maximum drain-source voltage of 30V, which limits the amount of current the device can handle and the switch-on time. The device is also capable of a maximum drain current of 15A.

When designing a circuit with the IRF7240TR, it is important to consider the gate-source voltage, the drain-source voltage and the gate resistor. A gate resistor is required to prevent the FET from conducting large unwanted currents due to inductive spikes or electrostatic discharges. The gate resistor also helps protect the gate from high frequency transients and over-voltages.

In addition to the above considerations, the user should also consider the temperature range the device can withstand and the maximum power dissipation rating. The output capacitance and the on-resistance of the FETfrom application to application, should also be taken into consideration when designing circuits. The on-resistance of the FET is also important, as it affects the power dissipation and the accuracy of the device.

The IRF7240TR is a versatile and reliable single FET with a wide range of applications and uses. It can be used in a number of high-current load switching and amplification applications, making it an ideal choice for a variety of applications. Its widely accepted design and its robust construction make it a popular choice for many electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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