| Allicdata Part #: | IRF7207-ND |
| Manufacturer Part#: |
IRF7207 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 20V 5.4A 8-SOIC |
| More Detail: | P-Channel 20V 5.4A (Tc) 2.5W (Tc) Surface Mount 8-... |
| DataSheet: | IRF7207 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 700mV @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 5.4A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF7207 is a high-voltage, fast-switching N-channel international rectifier MOSFET (metal-oxide-semiconductor field-effect transistor) that is used for a variety of applications including power management, RF (radio frequency) and motor control. This type of MOSFET offers low input capacitance, high current-handling capability and superior performance compared to other MOSFETs.
An IRF7207 is made up of two main components - the gate and the source. The gate is the control element that turns on and off the channel between source and drain and controls the current flow between them. The source is connected to the power and provides the current that powers the device. The drain is connected to the load, where the current is passed through.
The working principle of an IRF7207 is relatively simple. When voltage is applied to the gate, it polarizes the inter-gate oxide layer, resulting in a change in the device\'s threshold voltage and creating a depletion region on the gate where current freely flows from source to drain. When the gate voltage is increased, the current increases further and the depletion area expands. Finally, when the gate voltage reaches the maximum, the entire channel is turned on and the current passes through, reaching the desired level.
The IRF7207 is versatile and can be used in a variety of applications, ranging from high-voltage switching to RF and motor control. It is commonly used in power management circuits as a switch to route power to different devices. It is also widely used in automotive electrical applications as a switch for motor control. Additionally, the IRF7207 can be used in military, medical and industrial equipment, where precise power control is needed.
Its fast switching and an additional feature, the low input capacitance, make it an ideal choice for RF applications, such as RF amplifiers, noise filters, mixers, oscillators and other RF circuits. The low input capacitance helps reduce the oscillating frequency, resulting in improved signal fidelity. Additionally, the IRF7207 also combines good on-resistance, high gain, low noise and high switching speed, making it an excellent choice for RF applications.
Overall, the IRF7207 is an extremely versatile and reliable MOSFET with excellent performance characteristics. Its ability to switch quickly, its low input capacitance and its high current-handling capability make it an ideal choice for a variety of applications, ranging from power management and motor control to RF applications.
The specific data is subject to PDF, and the above content is for reference
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IRF7207 Datasheet/PDF