IRF7342TRPBF

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1. Describe

International Rectifier's fifth-generation HEXFET features advanced process technology to achieve extremely low on-resistance per silicon area. This benefit, coupled with fast switching speed and HEXFET Power MOSFET Very Rugged Device Design is known to provide designers with an extremely efficient and Reliable equipment for a variety of applications. SO-8 has been modified with a custom lead frame Enhanced thermal characteristics and multi-die capability make it ideal for a variety of power applications. With these improvements, Multiple devices can be used in one application Reduces board space. The package is designed for vapor phase, infrared Red, or wave soldering technique. power consumption greater than In a typical PCB mount application, 0.8W is possible.

2. Feature

    1. Fifth generation technology

    2. Ultra-low on-resistance

    3. Dual P-channel MOSFETs

    4. Surface mount

    5. Available in tape and reel packaging

    6. Dynamic dv/dt rating

    7. Quick switching

    8. Lead-free

3. Electrical Characteristics