IRF7807D2TR Allicdata Electronics
Allicdata Part #:

IRF7807D2TR-ND

Manufacturer Part#:

IRF7807D2TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 8.3A 8-SOIC
More Detail: N-Channel 30V 8.3A (Ta) 2.5W (Tc) Surface Mount 8-...
DataSheet: IRF7807D2TR datasheetIRF7807D2TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Power Dissipation (Max): 2.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: FETKY™
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF7807D2TR is an advanced power MOSFET transistor that is increasingly being used in a variety of applications. This section will discuss the applications of the FET and its underlying principles of operation.

Applications of the IRF7807D2TR

The IRF7807D2TR can be used in a variety of applications, ranging from power management, to motor/actuator control, to motor speed/position control. It is also used in automotive applications such as ignition and fuel injection systems. Other applications include power supplies, audio amplifier circuits, UPS systems, and in communications systems. It is also used as an input and output stage in a variety of industrial applications.

In general, many applications require efficient power MOSFETs due to their excellent performance in terms of speed, efficiency, switching power, and thermal management. They are capable of providing very high currents with relatively little power dissipation. This makes them suitable for high power switching applications.

Working Principle of the IRF7807D2TR

The IRF7807D2TR is a MOSFET transistor that uses the MOSFET semiconductor device technology to provide efficient and fast switching. It is an enhancement-type device, meaning that a gate voltage is applied to the gate electrode in order to switch the device on or off. It is an n-type MOSFET, meaning that it requires a negative to the gate in order to conduct. The current flows between the source and drain terminals in the direction of the arrow when the gate is made negative. When the gate voltage is low, the device is off, and no current can flow. The gate voltage required for the device to turn on is called the threshold voltage.

The IRF7807D2TR is capable of providing very high currents with low on-state resistances, making it ideal for switching applications. It is also capable of withstanding high voltages with minimal gate control current, making it ideal for working with high voltage devices. In addition, the device has a low turn-on and turn-off time, making it suitable for high-speed applications.

Conclusion

The IRF7807D2TR is an advanced power MOSFET transistor that is increasingly being used in a variety of applications. It can be used in power management, motor/actuator control, motor speed/position control, automotive applications, power supplies, audio amplifier circuits, UPS systems, and in communications systems. It is a MOSFET transistor that uses the MOSFET semiconductor device technology to provide efficient and fast switching, and is capable of providing high currents with low on-state resistances. Overall, the IRF7807D2TR is an ideal choice for high-speed and high-power switching applications.

The specific data is subject to PDF, and the above content is for reference

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