IRF7905PBF

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IRF7905PBF is a high-current, high-speed enhancement mode, N-Channel Power Mosfet Array. It is designed to provide a relatively high gain output stage with excellent avalanche characteristics. This power Mosfet Array utilizes proprietary design techniques which provide extremely low gate-to-source turn-on voltage while maintaining fast gate turn-off speed. IRF7905PBF is a dual Power MOSFET Array with each device containing two N-Channel power MOSFETs.

The IRF7905PBF is particularly suited for power supply and motor control applications, such as in switched-mode power supplies (SMPS), DC-DC converters and frequency converters, motor control, line drivers, motor drivers and relay drivers. Additionally, this device can also be used in audio, video, and computer supplies.

Application Field

IRF7905PBF is suitable for the following applications:

• Switched-mode power supplies (SMPS)
• DC-DC converters
• Frequency converters
• Motor control
• Line drivers
• Motor drivers
• Relay drivers
• Audio, video, computer supplies

Working Principle

IRF7905PBF is a dual Power MOSFET, containing two N-Channel power MOSFETs. It is designed to provide a relatively high gain output stage with excellent avalanche characteristics. This power MOSFET array utilizes proprietary design techniques which provide extremely low gate-to-source turn-on voltage while maintaining fast gate turn-off speed.

The MOSFETs are driven from the same gate providing independent and simultaneous control of two distinct MOSFETs. The power MOSFET has three terminals; source, gate and drain. The gate is used for controlling the device, so \'on\' and \'off\' are the two states of an enhancement-type Power MOSFET. When the gate is in the positive voltage with respect to the source (Vgs ≥ Vth), MOSFET will be \'on\' and conducts to the drain. Conversely when the gate is at a negative voltage with respect to the source (Vgs ≤ Vth), the MOSFET will be in \'off\' state and no current can flow through it.

The IRF7905PBF is designed to provide both low on-state resistance and low gate charge. It has a drain-to-source break down voltage (BVdss) of 18V and a drain current (Id) of up to 10A. The power MOSFET has a maximum power dissipation of 107 W and an efficiency of up to 99%. It also has a high-speed switching performance at 375 ns.

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