IRG7CH30K10EF Allicdata Electronics
Allicdata Part #:

IRG7CH30K10EF-ND

Manufacturer Part#:

IRG7CH30K10EF

Price: $ 0.96
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT CHIP WAFER
More Detail: IGBT Trench 1200V 10A Surface Mount Die
DataSheet: IRG7CH30K10EF datasheetIRG7CH30K10EF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3708 +: $ 0.86972
Stock 1000Can Ship Immediately
$ 0.96
Specifications
Switching Energy: --
Supplier Device Package: Die
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 600V, 10A, 22 Ohm, 15V
Td (on/off) @ 25°C: 10ns/90ns
Gate Charge: 4.8nC
Input Type: Standard
Series: --
Vce(on) (Max) @ Vge, Ic: 2.56V @ 15V, 10A
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 1200V
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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Introduction

IRG7CH30K10EF is a single IGBT module, which is designed for industrial power control uses.It has a wide range of applications, mainly related to power control and protection, such as motor control and frequency conversion. IRG7CH30K10EF is an enhanced IGBT module designed with fast switching capabilities and high current ratings.

Application Field

The main application field of IRG7CH30K10EF is power control. It is mainly used in AC motor control and frequency conversion, such as electric vehicles, inverter air conditioners, servo systems and industrial robots. In these applications, the normal thyristor drive cant meet the requirement of high switching capability, which is why this IGBT module is chosen.

Working Principle

IRG7CH30K10EF mainly relies on its IGBT structure for power control purposes. IGBT stands for ‘Insulated Gate Bipolar Transistor’, and it is a type of voltage-controlled transistor which combines MOSFET (metal oxide semiconductor field effect transistor) and BJT (bipolar junction transistor) features. This transistor is formed by a semiconductor layer in its core, with source, collector and gate terminals. The source terminal is connected to the N-type region, the collector to the P-type region, and the gate to the insulated gate.

IGBTs have several advantages which make them favourable for industrial use. They have high current capacity, high switching frequency and low power dissipation per unit time. Furthermore, they have a low on-state voltage drop and a low gate driving power requirement. And IGBTs are insensitive to harmonic voltage, thus maintaining a steady current flow. All those features make IGBTs particularly useful for switching applications, such as power control and motor control.

Conclusion

In conclusion, the IRG7CH30K10EF is a single IGBT module commonly used for industrial power control applications, such as motor control and frequency conversion. It takes advantage of the IGBT structure to offer fast switching capabilities and high current ratings, making it an ideal choice for those purposes.

The specific data is subject to PDF, and the above content is for reference

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