IRG7PH42UD-EP

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IRG7PH42UD-EP, produced by Infineon, is a power semiconductor device with high blocking voltage and low thermal resistance.

Application field

The IRG7PH42UD-EP is essentially a high voltage insulated gate bipolar transistor (IGBT) and is mostly used in electric drive systems, i.e. electric vehicles, where the demand for high current, high voltage and high power is met by the device. The device can also be used in traction, electric tools, uncontrolled rectified power supplies and soft-switched inverters which require unidirectional and bidirectional driving as well as DC link power buses.

The IRG7PH42UD-EP has a wide range of applications thanks to its high voltage rating (up to 1200V) and low thermal resistance. It is suitable for switching the loads of high currents and the electrical drive of motors. These applications involve power factors like low power loss (PLoss), switching frequency, charging and discharging times, etc., which the device enables to fulfill with its rated 50A peak current and maximum thermal resistance of 10K/W.

Working principle

The IRG7PH42UD-EP is an IGBT device, an insulated gate bipolar transistor with both a p-type and an n-type semiconductor. The structure of the IGBT consists of a p+-type layer, an n-type layer and a gate oxide layer. The gate oxide layer provides electrical isolation between the p-type and n-type layers. The device works on a simple principle. When a voltage is applied to the gate oxide layer, a small electric current flows through the oxide. This electric current polarizes the semiconductors, allowing electric current to flow through the device and turning it on. When the voltage is removed, the electric current stops and the device shuts off.

The switching speed of the IRG7PH42UD-EP is high, thanks to its fast recovery time. This allows it to switch both unidirectional and bidirectional powers in a fast and efficient way. Additionally, its low power loss, low reverse recovery time and low gate drive power consumption allow the device to maintain a lower temperature compared to other similar devices, preventing it from becoming too hot.

The IRG7PH42UD-EP device has a high blocking voltage which can regulate and control high power levels. Thanks to its high withstand voltage and reverse body diode, the device has been designed so that it can be effectively used in high temperature applications. The device also has low operating temperature and thus can work in applications with high temperature.

Conclusion

The IRG7PH42UD-EP is an ideal device for the electric drive system and other applications such as traction, electric tools, uncontrolled rectified power supplies and soft-switched inverters. Thanks to its high blocking voltage, fast switching speed and low power loss, the device is suitable for a wide range of applications. Additionally, its low gate drive power consumption and low temperature operation allow it to operate without becoming too hot.

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