IRG7PH44K10D-EPBF Allicdata Electronics
Allicdata Part #:

IRG7PH44K10D-EPBF-ND

Manufacturer Part#:

IRG7PH44K10D-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 70A 320W TO247AD
More Detail: IGBT 1200V 70A 320W Through Hole TO-247AD
DataSheet: IRG7PH44K10D-EPBF datasheetIRG7PH44K10D-EPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 2.1mJ (on), 1.3mJ (off)
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 130ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Td (on/off) @ 25°C: 75ns/315ns
Gate Charge: 200nC
Input Type: Standard
Series: --
Power - Max: 320W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Current - Collector Pulsed (Icm): 100A
Current - Collector (Ic) (Max): 70A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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The IRG7PH44K10D-EPBF is a N-Channel UltraFAST IGBT for inverter/converter applications. Designed for high-speed switching in IGBT converters with switching frequencies up to 20 kHz, it is suitable for a wide range of industrial and consumer electronics applications. This IGBT offers very fast switching times and excellent thermal performance, handling high-frequency switching at temperatures up to dissipated power at a single IGBT up to 234A and an on- state voltage drop of 1.6V.

The IRG7PH44K10D-EPBF is part of the Single IGBT family. It is a metal-oxide-semiconductor field-effect transistor (MOSFET) which is a device which can be used to control power in a circuit. Unlike other transistors it has three terminals. The source, gate, and drain terminals. When a voltage is applied to the gate, the current flows through the drain and source and the device turns on. This IGBT can be quite useful in a wide range of applications due to its high-speed switching and low on-state voltage drop.

When it comes to Single IGBTs, the IRG7PH44K10D-EPBF is designed for high-speed switching in IGBT converters. It provides excellent thermal performance with its UltraFAST switching and can handle frequencies up to 20kHz. It is used in various industrial and consumer electronics applications such as air conditioners and electric motors. It can also be used in rectification and other power conversion applications.

This device works on the principle of the bipolar junction transistor (BJT). It consists of two N-type semiconductor layers with a P-type layer in between them. When a voltage is applied to it, the electrons move from the N-type to the P-type, creating an inversion region which allows current to flow. The gate acts as a switch, controlling the current flow. When the gate is open, current flows from the source to the drain, and this is known as the "on" state. When the gate is closed, the current flow is stopped and this is known as the "off" state.

The application areas for the IRG7PH44K10D-EPBF IGBT include inverters, converters, DC-DC converters, AC-DC converters, switched mode power supplies, and power transmission. The main features of this IGBT include fast switching, low on-state voltage drop and excellent thermal performance. It also offers a high degree of efficiency compared to other types of transistors.

In conclusion, the IRG7PH44K10D-EPBF is a Single IGBT which is designed for high-speed switching in IGBT converters. It offers fast switching and excellent thermal performance with its UltraFAST design. This device is used in a number of applications including air conditioners, electric motors, and power conversion. It works on the principle of the bipolar junction transistor and can be used to switch current flow in a circuit.

The specific data is subject to PDF, and the above content is for reference

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