IRG7PH37K10D-EPBF Allicdata Electronics
Allicdata Part #:

IRG7PH37K10D-EPBF-ND

Manufacturer Part#:

IRG7PH37K10D-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 45A 216W TO247AD
More Detail: IGBT 1200V 45A 216W Through Hole TO-247AD
DataSheet: IRG7PH37K10D-EPBF datasheetIRG7PH37K10D-EPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 1mJ (on), 600µJ (off)
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 120ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Td (on/off) @ 25°C: 50ns/240ns
Gate Charge: 135nC
Input Type: Standard
Series: --
Power - Max: 216W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 45A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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Introduction

IRG7PH37K10D-EPBF is a popular IGBT (Insulated Gate Bipolar Transistor) product manufactured by International Rectifier. This product is a single-chip IGBT suitable for applications requiring a wide range of voltages, temperatures and currents. It is an ideal device for applications requiring high power conversion efficiency, reliability and cost effectiveness.

Application Field

IRG7PH37K10D-EPBF has a wide range of applications, from industrial to consumer electronics, such as controlling power supplies, powering motor drives, switching power converters and amplifiers, and for use in renewable energy generation.

In the industrial application field, it is used in high frequency applications such as motors and solenoids, as well as in applications such as industrial heating and plating processes. It also has applications in automotive control, including power steering, brake and engine control systems. In consumer electronics, it is used in the production of TVs, computers, smartphones, tablets and audio systems.

Working Principle

IGBTs are unipolar transistors which use a voltage controlled gate to control the drift of current between two terminals. An IGBT combines the best features of both bipolar transistors and MOSFETs. Like bipolar transistors, IGBTs have a low on-resistance and a high current gain, allowing for fast switching times and good power conversion efficiency. Like MOSFETs, IGBTs have low gate-to-source voltage requirements, making them suitable for use with high voltage applications.

The construction of an IGBT consists of two separate layers of doping. The lower layer provides the conduction between the other two layers, while the upper layer provides the gate control. When a voltage is applied to the gate terminal, electrons are attracted to the gate region and a conductive channel is created between the source and the drain. This channel allows electrons to flow between the two layers, enabling the current to be switched on or off.

Conclusion

IRG7PH37K10D-EPBF is a popular IGBT product manufactured by International Rectifier and is suitable for use in a wide range of applications. It uses a voltage controlled gate to control the flow of current between two terminals, offering a high current gain and power conversion efficiency. This makes it an ideal choice for industrial and consumer electronics alike.

The specific data is subject to PDF, and the above content is for reference

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