IRG7CH44K10EF

Switching Energy:	--
Supplier Device Package:	Die
Package / Case:	Die
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	600V, 25A, 10 Ohm, 15V
Td (on/off) @ 25°C:	60ns/230ns
Gate Charge:	160nC
Input Type:	Standard
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 25A
Current - Collector (Ic) (Max):	25A
Voltage - Collector Emitter Breakdown (Max):	1200V
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Lead Free Status / RoHS Status:	--
Part Status:	Active

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The IRG7CH44K10EF is a single-gate IGBT (Insulated Gate Bipolar Transistor). It belongs to the IRG7 IGBT family, which includes devices in multiple voltage ratings and gate current levels. The IRG7CH44K10EF features a high turn-on / OFF switching speed with a low saturation voltage. It is used in converters, inverters and power factor correction circuits due to its good combination of low loss, low noise, and wide safe-operating-area capability.

Application Field

The IRG7CH44K10EF is suitable for various motor control applications, including industrial motor control, factory automation, and aviation motor control. It can be used for motor controls in various applications such as washing machines, dishwashers, and dryers. In addition, it is suitable for many low-power applications such as car audio systems and DC/DC converters. It can also be used in snubber circuits to reduce voltage spikes, bridge circuits to efficiently switch between two power sources, and other circuit applications. The device is also suitable for high-precision motion control due to its high switching capability, low leakage current, and low static drain-source resistance.

Working Principle

With the IRG7CH44K10EF, the transistor gate needs to be biased first and turned on by an external gate signal. The high voltage between the emitter and collector causes the device to switch on, allowing the collector current to flow through the device. The IRG7CH44K10EF has low on-state losses due to its low saturation voltage, so the current flowing through it is low and the switching frequency can be increased. The device has high switching speeds, and good current flow control and energy transfer efficiency. When the gate signal is removed, the device turns off and the voltage between the collector and emitter decreases, switching off the device. The device has a low off-state leakage current, so it does not consume power when it is not activated.

Conclusion

The IRG7CH44K10EF is a single-gate IGBT that is suitable for motor control and other low-power applications. It features high switching speed and low saturation voltage, while also providing low leakage current and low static drain-source resistance. The device has high power efficiency and current flow control, making it suitable for high-precision motion control.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description