IRG7CH50K10EF Allicdata Electronics
Allicdata Part #:

IRG7CH50K10EF-ND

Manufacturer Part#:

IRG7CH50K10EF

Price: $ 2.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT CHIP WAFER
More Detail: IGBT Trench Field Stop 1200V 35A Surface Mount Di...
DataSheet: IRG7CH50K10EF datasheetIRG7CH50K10EF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1100 +: $ 2.68327
Stock 1000Can Ship Immediately
$ 2.95
Specifications
Switching Energy: --
Supplier Device Package: Die
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 600V, 35A, 10 Ohm, 15V
Td (on/off) @ 25°C: 50ns/280ns
Gate Charge: 170nC
Input Type: Standard
Series: --
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Current - Collector (Ic) (Max): 35A
Voltage - Collector Emitter Breakdown (Max): 1200V
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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An IRG7CH50K10EF is a single Insulated Gate Bipolar Transistor (IGBT) that is commonly used in a variety of applications. The IRG7CH50K10EF is typically used in medium levels of power switching, motor control, and various other power electronic applications such as lighting, welding, medical equipment, and industrial automation. The IRG7CH50K10EF is a bipolar power semiconductor device that includes both metal-oxide-semiconductor field-effect (MOSFET) and bipolar junction transistors (BJTs).

The construction of the IRG7CH50K10EF IGBT device is slightly different than that of other commonly used power semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETFETs). IGBT devices have a gate oxide layer that isolates a substrate from an opposite winding gate electrode. The gate oxide layer of the IRG7CH50K10 EF is much thicker than that of a MOSFET device, allowing for the handling of higher power levels than the MOSFET and making it more reliable and efficient when used in various applications. The higher voltage capability and higher current handling capacity of the IGBT device make them perfect for applications where high power switching is required.

The working principle of the IRG7CH50K10EF IGBT is relatively simple. In order to turn the device on, a small voltage is applied to the gate of the device and this voltage allows current to start flowing. When the voltage is increased, the current flow through the device increases, allowing the device to turn on and begin conducting electricity. In order to turn the device off, the voltage is decreased and this allows the current flow to switch quickly and efficiently between the collector and the emitter, reducing the overall power consumption.

The IRG7CH50K10EF IGBT is most commonly used in applications such as motor controls, welding, lighting, medical equipment and industrial automation. In motor control applications, the device is used to control the speed of motors by switching the current to the motor. This allows the motor to start and stop quickly and also to adjust the speed of the motor without causing too much of a surge or drop in the current. In welding applications, it is used to control the current during welding operations. It is also used in lighting applications as it is able to switch the current to the bulb quickly and efficiently.

In medical equipment applications, the device is used to switch the current from one device to another, allowing the equipment to operate more efficiently. In industrial automation applications, the device is used to switch the power to and from components, allowing them to activate or deactivate quickly and reliably. All of these applications require that the device be able to handle high current and voltage levels as well as being efficient in its operation.

The IRG7CH50K10EF IGBT is a powerful and robust power semiconductor device that has hundreds of applications in a variety of industries. Its ability to handle high currents and voltages while remaining efficient makes it ideal for many power electronic applications. The device is relatively simple to use and can be used in a variety of different applications, making it an ideal choice for controlling various power electronic devices.

The specific data is subject to PDF, and the above content is for reference

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