IRG7PH42UD1-EP

Transistors - IGBTs - Single

The IRG7PH42UD1-EP IGBT is a single transistor designed to optimally operate in a wide variety of applications. It is an integrated gate bipolar transistor, or IGBT, which contains – as its name implies – a combination of an insulated gate field-effect transistor (IGFET) and bipolar junction transistor,A (BJT). Its purpose is to improve the overall performance, efficiency and speed of analog circuit applications.

High-Current Capabilities

Offering a maximum collector current of 42 A, the IRG7PH42UD1-EP is able to handle higher current than many other IGBTs in its category. This makes it well suited to many applications where efficiency, performance and reliability are important.

Applications

Due in part to its high-current capabilities, the IRG7PH42UD1-EP is often used in power applications, including AC inverters, frequency converters and various motor controllers. It is especially useful in providing high-frequency switching, with a frequency range of 0–100 kHz. This transistor is also popular in other applications where speed, efficiency and current-handling capacity are important.

Parameters

The IRG7PH42UD1-EP’s turn-on and turn-off times are respectively 0.4 and 0.4 µs, for starters. This helps it perform up to its full efficiency. Its maximum drain-source voltage range is up to 600 V, with a gate-source voltage of just 10 V. It has a maximum on-state voltage drop of 1.7 V and a typical saturation voltage of 1.4 V. Its maximum junction temperature is 150 ∘C. In addition to these parameters, the IRG7PH42UD1-EP comes with a wide array of other specifications to help it conform to a variety of applications.

Working Principle

The IRG7PH42UD1-EP can be used as either a switch or an amplifier. In the switching mode, it acts as an on-off component, allowing a current or voltage to pass or be blocked. When used as an amplifier, its high-frequency switching capabilities allow it to amplify high-end signal frequencies, such as those that exist in a radio signal. Its transistor design enables it to control the current and voltage flow in a circuit, when used in either its switching or amplifying modes.

Conclusion

The IRG7PH42UD1-EP IGBT is a single-transistor device that combines the best of both insulated gate field-effect transistor (IGFET) and bipolar junction transistor (BJT) technologies to provide superior performance, efficiency and speed. Due to its high-current capabilities and wide range of uses, this IGBT is popular in applications that require high-performance and efficiency, such as AC inverters, frequency converters, motor controllers and other electronics. Its high-frequency switching capabilities also make it well-suited for the amplification of high-end signals. With its wide range of parameters and specifications, the IRG7PH42UD1-EP can be custom-tailored to meet virtually any IGBT application needs.