IRG7PG35U-EPBF

Switching Energy:	1.06mJ (on), 620µJ (off)
Supplier Device Package:	TO-247AD
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	600V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C:	30ns/160ns
Gate Charge:	85nC
Input Type:	Standard
Series:	--
Power - Max:	210W
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 20A
Current - Collector Pulsed (Icm):	60A
Current - Collector (Ic) (Max):	55A
Voltage - Collector Emitter Breakdown (Max):	1000V
IGBT Type:	Trench
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRG7PG35U-EPBF is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) produced by International Rectifier (IR). IGBTs are a type of power semiconductor devices which combine the advantages of both field-effect transistors (FETs) and bipolar junction transistors (BJTs). They are popularly used for various applications like switched-mode power supplies, variable frequency drives, induction heating, motor control, solid-state lighting and automotive electronics.

Features

The IRG7PG35U-EPBF offers several unique features include: • Low loss and high efficiency • Low saturation voltage• Soft turn-on and fast turn-off • High temperature operation• RoHS compliant• Low electromagnetic interference• Superior thermal performance • High surge capability

Application Field

The IRG7PG35U-EPBF is applicable for a wide range of applications. It is suitable for controlling low voltage and high current circuits, such as switched-mode power supplies, uninterruptible power supply systems, and general industrial and automotive power control applications. The device offers high efficiency and low loss due to its low saturation voltage and fast switching capability, making it popularly used in high power, high frequency power conversion applications. It is also used in high-temperature applications, such as in electric vehicles.

Working Principle

IGBTs are four-layer semiconductor devices, consisting of two P-N junctions connected in series with two high resistance P-N isolation layer. In its off state, the P-N is completely isolated from each other, preventing current flow between the two junctions. In the on state, when a gate signal is applied, the current between the two junctions can flow, creating a low on resistance path.The P-N isolation layer of IRG7PG35U-EPBF is made of low resistance alloys, making it ideal for high power applications. Due to its soft turn-on feature, the device produces less EMI interference. The built-in protection and reverse bias safe operating area (RBSOA) protect it from accidental over-currents.

Conclusion

We have discussed the IRG7PG35U-EPBF and its numerous applications in this article. The device is extremely useful in many applications, such as switched-mode power supplies, uninterruptible power supplies and electric vehicles. Its high efficiency and low saturation voltage make it an excellent choice for high power, high frequency power conversion applications. Additionally, its unique protection features and low electromagnetic interference make it a reliable and safe component for various applications.

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