IRG7PH35UD1MPBF Allicdata Electronics
Allicdata Part #:

IRG7PH35UD1MPBF-ND

Manufacturer Part#:

IRG7PH35UD1MPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 50A 179W TO247AD
More Detail: IGBT Trench 1200V 50A 179W Through Hole TO-247AD
DataSheet: IRG7PH35UD1MPBF datasheetIRG7PH35UD1MPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 620µJ (off)
Base Part Number: IRG7PH35
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 600V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/160ns
Gate Charge: 130nC
Input Type: Standard
Series: --
Power - Max: 179W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench
Part Status: Obsolete
Packaging: Tube 
Description

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IRG7PH35UD1MPBF is an insulated gate bipolar transistor (IGBT) from Mitsubishi Electric Corporation. It is a high-voltage switching device with enhanced drive characteristics and long life reliability. It is available in various package types including TO-220, TO-220 Full Pack, DIP, and SIP. The IRG7PH35UD1MPBF is suitable for high voltage and high power applications, such as motor control, power conversion, and power factor correction. It is also commonly used in automotive, industrial, and home applications.

The IRG7PH35UD1MPBF is a single transistor device with an input terminal, a collector terminal, and an output terminal. It operates with a control input voltage that switches the device between an “on” and “off” state. When the control input voltage is positive, the device is in an “on” state and the collector current will flow through the device. When the control voltage is negative, the device is in an “off” state, which blocks the collector current. The output terminal is connected to the base of the transistor, allowing the base current to flow through the device and to the output terminal.

The IRG7PH35UD1MPBF is designed for use in high-voltage and high-power applications. It has a collector-emitter voltage rating of 600 V and a collector current rating of 11 A. The maximum rated surge current is 120 A. The device has a high output current gain and a low on-voltage that enables high frequency operation. The device also has a high reverse dv/dt rating, meaning it can handle high rates of voltage transient change.

The IRG7PH35UD1MPBF is designed with an enhanced drive circuit. This enhances the control input voltage range, improves the transition characteristics, and reduces switching losses as compared to conventional IGBTs. The device also incorporates advanced high temperature design features, reducing and/or eliminating electromigration and thermal runaway failure mechanisms. The device is also self-protected against thermal over-current effects and over-voltage conditions.

The IRG7PH35UD1MPBF is an ideal solution for high power applications that require long life reliability, high frequency operation, and high-voltage operation. It offers improved performance, fast switching, and robust protection features that make it a versatile and reliable device.

The specific data is subject to PDF, and the above content is for reference

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