
Allicdata Part #: | IRG7PG42UD-EPBF-ND |
Manufacturer Part#: |
IRG7PG42UD-EPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1000V 85A 320W TO247AD |
More Detail: | IGBT Trench 1000V 85A 320W Through Hole TO-247AD |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 2.11mJ (on), 1.18mJ (off) |
Supplier Device Package: | TO-247AD |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 153ns |
Test Condition: | 600V, 30A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 25ns/229ns |
Gate Charge: | 157nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 320W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 90A |
Current - Collector (Ic) (Max): | 85A |
Voltage - Collector Emitter Breakdown (Max): | 1000V |
IGBT Type: | Trench |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRG7PG42UD-EPBF is a popular device which can be used as a transistor, specifically as a type of Insulated Gate Bipolar Transistor (IGBT). This piece of technology brings many advantages to the design. As is the case with many transistors, the IRG7PG42UD-EPBF is used for the purpose of amplifying electrical signals. It is also capable of handling very high voltages and is much more reliable and efficient than other types of transistors. This type of device is also very versatile and can be used in many different applications and environments.
Application field and Working Principle of IRG7PG42UD-EPBF
The IRG7PG42UD-EPBF device is mainly designed for use as a transistor in high-speed signal processing, power conversion, and power switching applications. This is because the device has very fast switching capabilities and is extremely reliable. The device can also handle very high voltages, making it useful for a variety of applications.
The working principle of the IRG7PG42UD-EPBF is based on a simple design. The structure of the device consists of an emitter, a base and a collector which are connected in a specific way. The base is the controlling element which is used to control the current that passes through the device. The emitter and collector are used to collect and distribute the current. The base is controlled by a voltage applied to it. When this happens, the flow of electrons from the emitter to the collector is increased or decreased depending on the applied voltage. This is referred to as the ‘gain control’
This method of gain control means that the device can effectively amplify signals as well as switch them. This also ensures that the device can handle very high voltages with ease. In addition to all these advantages, the IRG7PG42UD-EPBF is also very reliable and long-lasting which makes it very ideal for various applications.
Advantages of IRG7PG42UD-EPBF
One of the most notable advantages of the IRG7PG42UD-EPBF is in its versatility. This device is capable of handling a wide range of voltages and is ideal for applications that require very high voltages such as power amplifiers, high-speed signal processing devices, and high-voltage switching devices. In addition to this, the device has excellent switching speed, efficiency and reliability. This makes it perfect for applications where absolute reliability is required.
Another advantage of the IRG7PG42UD-EPBF is that it is made of very small and light components. This makes it perfect for applications where size and weight are a concern such as in the aerospace or automotive industries. It is also much more efficient than other types of transistors, meaning that it is often a cost-effective solution.
Finally, the IRG7PG42UD-EPBF can handle a great deal of power, allowing it to work effectively in many different types of applications. This means that it can be used in power systems and power conversion and switching applications, which are critical for any business or industry.
Conclusion
In conclusion, the IRG7PG42UD-EPBF is an excellent piece of technology that is perfect for a wide range of applications. It is designed for use as a transistor and is capable of handling very high voltages. In addition to all these advantages, the device is also very reliable and efficient and is much smaller and lighter than other types of transistors, making it perfect for smaller, lighter applications as well as those applications which require absolute reliability.
The specific data is subject to PDF, and the above content is for reference
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