| Allicdata Part #: | IRG7PH35U-EP-ND |
| Manufacturer Part#: |
IRG7PH35U-EP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 1200V 55A TO247 |
| More Detail: | IGBT Trench 1200V 55A 210W Through Hole TO-247AD |
| DataSheet: | IRG7PH35U-EP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Switching Energy: | 1.06mJ (on), 620µJ (off) |
| Base Part Number: | IRG7PH35 |
| Supplier Device Package: | TO-247AD |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Test Condition: | 600V, 20A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | 30ns/160ns |
| Gate Charge: | 130nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 210W |
| Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 20A |
| Current - Collector Pulsed (Icm): | 60A |
| Current - Collector (Ic) (Max): | 55A |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| IGBT Type: | Trench |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRG7PH35U-EP is an IGBT (Insulated Gate Bipolar Transistor) module used in applications such as motor control, welding, adjustable power supplies, UPS systems, and renewable energy systems. It consists of three components: a diode, an IGBT, and a fast recovery diode. IGBTs are semiconductor devices that combine the advantages of both bipolar transistors and MOSFETs (metal-oxide semiconductor field-effect transistors). They provide lower on-resistance and excellent switching characteristics, making them ideally suited for power switching applications.
The IRG7PH35U-EP features a built-in fast recovery diode. The diode is designed for fast recovery time, which means it can dissipate large peak transient currents better than other IGBT modules. This makes it suitable for applications such as motor control, welding, adjustable power supplies, UPS systems, and renewable energy systems. Its built-in fast recovery diode also allows for better operation in a wider operating temperature range.
The IGBT in the IRG7PH35U-EP has a high voltage rating of 1200V nominal, which makes it suitable for high voltage applications. At the same time, the module has a current rating of 35A nominal. The IGBT also has a low on-resistance (1.2Ω typ.), which enables higher efficiency and reduced power losses.
The main characteristic that makes the IRG7PH35U-EP unique is its fast recovery time. The module is designed to handle large peak transient currents (commonly seen in motor control applications), and its fast recovery time means that it can respond quickly to changes in current levels. This makes the IRG7PH35U-EP a suitable choice for applications such as motor control, welding, adjustable power supplies, UPS systems, and renewable energy systems.
The IRG7PH35U-EP is designed as a single device, meaning that it consists of just one diode and one IGBT. This makes it an ideal choice for applications that require a small and cost-effective solution. The device is small in size, has low power losses, and is suitable for a wide range of applications.
The IRG7PH35U-EP is an efficient and cost-effective IGBT module that is suitable for a wide range of applications. Its built-in fast recovery diode makes it well-suited for motor control, welding, adjustable power supplies, UPS systems, and renewable energy systems. Its low on-resistance and high voltage rating makes it efficient for power switching applications. The module also has a small size and is designed as a single device, making it a suitable solution for applications that require a small and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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IRG7PH35U-EP Datasheet/PDF