| Allicdata Part #: | IRG7PH42UD2-EP-ND |
| Manufacturer Part#: |
IRG7PH42UD2-EP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 1200V 60A 321W TO247AC |
| More Detail: | IGBT Trench 1200V 60A 321W Through Hole TO-247AD |
| DataSheet: |  IRG7PH42UD2-EP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Switching Energy: | 1.32mJ (off) |
| Base Part Number: | IRG7PH42 |
| Supplier Device Package: | TO-247AD |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 600V, 30A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | -/233ns |
| Gate Charge: | 234nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 321W |
| Vce(on) (Max) @ Vge, Ic: | 2.02V @ 15V, 30A |
| Current - Collector Pulsed (Icm): | 90A |
| Current - Collector (Ic) (Max): | 60A |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| IGBT Type: | Trench |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRG7PH42UD2-EP Application Field and Working Principle
Since the inception of transistors and integrated circuits, power semiconductor devices, such as insulated gate bipolar transistors (IGBTs), have made significant progress in the field of power electronics. The IRG7PH42UD2-EP is a 600-V N-channel short-circuit withstand IGBT, making it one of the most popular IGBTs used in low- and medium-power applications. In this article, we will discuss the application field of its usage and the working principle of the IGBT.
Application Field
The IRG7PH42UD2-EP is used for power applications in the range of 200 to 1000 A, making it suitable for medium voltage single-phase and three-phase inverters, regenerative braking inverters, and adjustable speed motor drives. It is also capable of motor control applications including motor starters, wind turbine pitch control, solar array inverters, and battery chargers. Additionally, its short-circuit withstand capability makes it suitable as a high-frequency switch in power supplies and UPS systems.
Working Principle of IGBTs
IGBTs are insulated gate bipolar transistors that are a combination of a metal-oxide-semiconductor field-effect transistor (MOSFET) for the control of current, and a bipolar junction transistor (BJT) for controlling power. It makes use of both P-type and N-type semiconductor layers in order to form a bipolar structure.The gate is the main control element of an IGBT. It is an insulated gate on the surface of the junction between the P-type and N-type layers of the transistor. Applying a voltage to the gate allows charges to pass through the semiconductor layers, creating an electric field and allowing current to flow.When increasing the gate voltage, the conductivity between the emitter and collector can increase significantly, allowing current to flow at a very high rate. When the gate voltage is decreased, the flow of current slows down and the IGBT switches off. This allows an IGBT to act as an efficient power switch by quickly and accurately switching off when required.
Conclusion
The IRG7PH42UD2-EP is an IGBT device that combines both MOSFET and BJT technologies for controlling power in applications ranging from motor starters to UPS systems. It offers improved performance and reliability, making it an ideal choice for medium-power applications.
Since the inception of transistors and integrated circuits, power semiconductor devices, such as insulated gate bipolar transistors (IGBTs), have made significant progress in the field of power electronics. The IRG7PH42UD2-EP is a 600-V N-channel short-circuit withstand IGBT, making it one of the most popular IGBTs used in low- and medium-power applications. In this article, we will discuss the application field of its usage and the working principle of the IGBT.
Application Field
The IRG7PH42UD2-EP is used for power applications in the range of 200 to 1000 A, making it suitable for medium voltage single-phase and three-phase inverters, regenerative braking inverters, and adjustable speed motor drives. It is also capable of motor control applications including motor starters, wind turbine pitch control, solar array inverters, and battery chargers. Additionally, its short-circuit withstand capability makes it suitable as a high-frequency switch in power supplies and UPS systems.
Working Principle of IGBTs
IGBTs are insulated gate bipolar transistors that are a combination of a metal-oxide-semiconductor field-effect transistor (MOSFET) for the control of current, and a bipolar junction transistor (BJT) for controlling power. It makes use of both P-type and N-type semiconductor layers in order to form a bipolar structure.The gate is the main control element of an IGBT. It is an insulated gate on the surface of the junction between the P-type and N-type layers of the transistor. Applying a voltage to the gate allows charges to pass through the semiconductor layers, creating an electric field and allowing current to flow.When increasing the gate voltage, the conductivity between the emitter and collector can increase significantly, allowing current to flow at a very high rate. When the gate voltage is decreased, the flow of current slows down and the IGBT switches off. This allows an IGBT to act as an efficient power switch by quickly and accurately switching off when required.
Conclusion
The IRG7PH42UD2-EP is an IGBT device that combines both MOSFET and BJT technologies for controlling power in applications ranging from motor starters to UPS systems. It offers improved performance and reliability, making it an ideal choice for medium-power applications.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "IRG7" Included word is 40
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IRG7CH54K10EF-R | Infineon Tec... | 4.54 $ | 1000 | IGBT 1200V ULTRA FAST DIE... |
| IRG7PH28UEF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V 15A TO247IGBT ... |
| IRG7PK42UD1MPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V DIEIGBT |
| IRG7U150HF12B | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 150A POWIR... |
| IRG7U75HF12A | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 75A POWIR ... |
| IRG7PH35UD1PBF | Infineon Tec... | -- | 1000 | IGBT 1200V 50A 179W TO247... |
| IRG7PH35U-EPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V ULTRA FAST TO2... |
| IRG7T15FF12Z | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 15A 6PK EZ... |
| IRG7PK35UD1-EPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1400V 40A 167W TO247... |
| IRG7CH75UED-R | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V ULTRA FAST DIE... |
| IRG7PH42UD1MPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V 85A 313W TO247... |
| IRG7CH42UEF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V ULTRA FAST DIE... |
| IRG7U100HF12A | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 100A POWIR... |
| IRG7CH30K10EF | Infineon Tec... | 0.96 $ | 1000 | IGBT CHIP WAFERIGBT Trenc... |
| IRG7S313UTRLPBF | Infineon Tec... | -- | 1000 | IGBT 330V 40A 78W D2PAKIG... |
| IRG7CH20K10EF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V DIEIGBT |
| IRG7T300CH12B | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 300A POWIR... |
| IRG7PH42UD-EP | Infineon Tec... | -- | 1000 | IGBT 1200V 85A 320W TO247... |
| IRG7T300SD12B | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 300A POWIR... |
| IRG7CH73K10EF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V ULTRA FAST DIE... |
| IRG7PK42UD1-EPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V ULTRA FAST TO2... |
| IRG7PH35UD-EP | Infineon Tec... | -- | 1000 | IGBT 1200V 50A COPAK247IG... |
| IRG7PH30K10DPBF | Infineon Tec... | -- | 1000 | IGBT 1200V 30A 180W TO247... |
| IRG7PH28UD1MPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V 30A 115W TO247... |
| IRG7CH75UEF-R | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V ULTRA FAST DIE... |
| IRG7PSH50UDPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V 116A 462W TO27... |
| IRG7PH42UD-EPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V ULTRA FAST TO2... |
| IRG7PH42UD2PBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V 60A 321W TO247... |
| IRG7PG42UDPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1000V 85A 320W TO247... |
| IRG7PH42UD1PBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V 85A 313W TO247... |
| IRG7T200CL12B | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 200A POWIR... |
| IRG7PSH73K10PBF | Infineon Tec... | 12.12 $ | 884 | IGBT 1200V 220A 1150W SUP... |
| IRG7T150CL12B | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 150A POWIR... |
| IRG7T300CL12B | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 300A POWIR... |
| IRG7PH46UD-EP | Infineon Tec... | -- | 25 | IGBT 1200V 108A COPAK247I... |
| IRG7PK35UD1MPBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V ULTRA FAST TO2... |
| IRG7PH35UPBF | Infineon Tec... | -- | 1000 | IGBT 1200V 55A 210W TO247... |
| IRG7U100HF12B | Infineon Tec... | 0.0 $ | 1000 | MOD IGBT 1200V 100A POWIR... |
| IRG7PH30K10PBF | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V 33A 210W TO247... |
| IRG7CH46UED | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V ULTRA FAST DIE... |
Latest Products
IKW03N120H2FKSA1
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
AUXKNG4PH50S-215
IGBT 1200V TO247-3IGBT
AUIRG4PH50S-205
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
AUXMIGP4063D
IGBT 600V TO-247 COPAKIGBT
FGD3N60LSDTM-T
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
IXGM40N60AL
POWER MOSFET TO-3IGBT