IRG7PH35UD1-EP Allicdata Electronics
Allicdata Part #:

IRG7PH35UD1-EP-ND

Manufacturer Part#:

IRG7PH35UD1-EP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 50A 179W TO247
More Detail: IGBT Trench 1200V 50A 179W Through Hole TO-247AD
DataSheet: IRG7PH35UD1-EP datasheetIRG7PH35UD1-EP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 620µJ (off)
Base Part Number: IRG7PH35
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 600V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/160ns
Gate Charge: 130nC
Input Type: Standard
Series: --
Power - Max: 179W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench
Part Status: Obsolete
Packaging: Tube 
Description

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IRG7PH35UD1-EP is a power module of the Insulated Gate Bipolar Transistor (IGBT) in single type. The module is a high voltage, high power device and is widely used in applications involving power switching or motor control. It is an advanced power semiconductor device which has been developed to provide reliable and efficient electrical insulation, low losses and fast switching speed. It can be used for both low- and high-voltage applications.

One of the biggest advantages of the IRG7PH35UD1-EP is its high currents and power levels with low power losses. The IGBT module can offer up to 4500V, 120A, and 1700W of output power. This makes it one of the most efficient and powerful devices out there. It also has a volumetric efficiency of 77.8mW/m3, compared to the industry-standard 69mW/m3, making it a great choice for applications with tight space limits.

The IRG7PH35UD1-EP features a dual-mode body structure which allows it to switch faster and perform better. The device has a non-zero voltage switchable time of 40ns, enabling it to switch quickly without generating any electrical noise or hiccups. The device also offers excellent heat dissipation and is insulated from the environment. This ensures reliable and long-term effective operation.

The working principle of this IGBT module involves the gate-controlled flow of electrical current between the emitter and collector of the device. The IGBT gate is held at a certain voltage, which, when it reaches a certain value, allows current to flow. The current passes through the conductivity channels located in the IGBT, which then moves the electrons across the device. This process can be controlled, allowing the switching of the current in either direction.

The IRG7PH35UD1-EP is widely used in applications such as motor drives, welding, solar inverter and motor control. As one of the most efficient and powerful devices out there, it is a great choice for applications with tight space limitations. It is also commonly used in applications involving power switching or motor control.

The IRG7PH35UD1-EP is an ideal choice for applications which require fast switching and high voltages. Its high performance and power levels make it a great choice for applications involving power switching or motor control, as well as for applications with tight space limitations. It offers both low- and high-voltage operations and is a reliable and efficient device for a variety of uses.

The specific data is subject to PDF, and the above content is for reference

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