IRG7CH42UEF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRG7CH42UEF is a single Insulated Gate Bipolar Transistor (IGBT), which is a type of power switching device that combines the similar characteristics of both metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs). This particular IGBT has a blocking voltage of 600V, an on-state current of 42A and a switching frequency of 25000Hz. Its current gain is 75 and it is therefore, ideal for applications involving high current switching. In addition, it is also capable of efficiently eliminating the risk of electrical spark due to its low on-state voltage.

An IGBT is a four layer semiconductor device that consists of two p-n junctions connected in series between two n-type layers. The n-type layer is made of thin layers of silicon dioxide, which is sandwiched between two layers of silicon. This structure enables a current to flow from the collector to the emitter, as well as from the collector to the gate. A voltage applied to the gate can modulate the current from the collector to the emitter. This modulation is used to control the current flow between the source and the drain, thereby enabling switch rapidly between on and off states.

The IRG7CH42UEF is an ideal switch for applications that require high current ratings with fast switching speeds. This feature makes the IRG7CH42UEF particularly suitable for use in applications such as motor control, electronic lighting ballasts, and uninterruptible power supplies. This IGBT can also be utilized in high-power applications such as welding machines, as well as in switching circuits such as phase-controlled rectifiers and power inverters. The ability to switch high currents with low on-state voltage also makes the IGBT an ideal choice for applications that require low switching losses and improved efficiency.

The working principle of an IRG7CH42UEF is similar to that of a bipolar junction transistor. The current is primarily controlled by the voltage applied to the gate. The applied voltage increases the electron Hole pairs within the channel and consequently, increases the conductivity of the channel. This increases the current from the collector to the emitter as well as from the source to the drain. The applied voltage across the gate and the collector can also be used to control the switching speed and on-state resistance. This feature enables the IGBT to offer fast switching speeds and low on-state losses when compared to MOSFETs.

The IRG7CH42UEF is a robust and reliable power switch that is well suited for applications that require high current switching and low switching losses. Its wide blocking voltage range and high current capabilities make it suitable for use in a variety of applications, such as motor control and power inverters. The ability to switch high currents with low on-state voltage also makes it an ideal choice for applications where high switching speeds and improved efficiency are required.

The specific data is subject to PDF, and the above content is for reference