IRG7S313UTRLPBF Allicdata Electronics
Allicdata Part #:

IRG7S313UTRLPBFCT-ND

Manufacturer Part#:

IRG7S313UTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 330V 40A 78W D2PAK
More Detail: IGBT Trench 330V 40A 78W Surface Mount D2PAK
DataSheet: IRG7S313UTRLPBF datasheetIRG7S313UTRLPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Input Type: Standard
Base Part Number: IRG7S313UPBF
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Test Condition: 196V, 12A, 10 Ohm
Td (on/off) @ 25°C: 1ns/65ns
Gate Charge: 33nC
Series: --
Switching Energy: --
Power - Max: 78W
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 330V
IGBT Type: Trench
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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Introduction

The International Rectifier IRG7S313UTRLPBF IGBT is a 30A, 600V field stop IGBT with an Ultra-fast recovery anti-parallel diode. This product is part of the fourth-generation IGBT technology with improved features compared to those of the previous generations.

Application Field

The IRG7S313UTRLPBF IGBT is designed for use in a wide range of applications such as AGV, solar inverters, motor drives, servo and VVT motor drives, server, telecommunications power supplies, UPS, and air conditioners. Its low gate charge and fast switching characteristic is suitable for uses in power electronic systems.

Advantages

  • Ultra-fast 10ns trr
  • High speed switching
  • High efficiency for superior power density
  • Very low saturation voltage
  • High EMI immunity
  • Field Stop IGBT designs
  • Silicon-controlled rectifier (SCR) behavior for easier gate driving operation

Working Principle

The IRG7S313UTRLPBF IGBT operates on a simple principle. The device consists of an N-type collector, P-type base, and an N-type emitter. When a voltage is applied to the IGBT gate, a large current flows between the collector and the emitter and the device is turned on. When the gate voltage is removed, the device turns off due to the removal of the charge carriers.

The main advantage of the IGBT compared to traditional power semiconductor devices is its superior switching performance. The IGBT has reduced turn-on and turn-off times due to its low on-state voltage drop and reduced input capacitance. This results in higher switching frequencies and lower power losses. Furthermore, the IGBT offers a greater level of immunity to external electromagnetic interference (EMI). This makes it ideal for use in applications where EMI is a concern.

Conclusion

In conclusion, the IRG7S313UTRLPBF IGBT provides higher efficiency, better immunity to external EMI, and a very low saturation voltage compared to other traditional power semiconductors. It is ideal for applications such as AGV, solar inverters, motor drives, servo and VVT motor drives, server, telecommunications power supplies, UPS, and air conditioners.

The specific data is subject to PDF, and the above content is for reference

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