IRG7PH30K10PBF Allicdata Electronics
Allicdata Part #:

IRG7PH30K10PBF-ND

Manufacturer Part#:

IRG7PH30K10PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 33A 210W TO247AC
More Detail: IGBT Trench 1200V 33A 210W Through Hole TO-247AC
DataSheet: IRG7PH30K10PBF datasheetIRG7PH30K10PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 530µJ (on), 380µJ (off)
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 600V, 9A, 22 Ohm, 15V
Td (on/off) @ 25°C: 14ns/110ns
Gate Charge: 45nC
Input Type: Standard
Series: --
Power - Max: 210W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
Current - Collector Pulsed (Icm): 27A
Current - Collector (Ic) (Max): 33A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench
Part Status: Obsolete
Packaging: Tube 
Description

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IRG7PH30K10PBF Application Field and Working Principle

IRG7PH30K10PBF is an Insulated Gate Bipolar Transistor (IGBT) module under the Transistors - IGBTs - Single category manufactured by Infineon Technologies. It includes two IGBTs, diodes, and a baseplate. The IGBTs in this module feature high speed switching, high surge current capability and low power loss. They are suitable for a wide range of applications, including microprocessor-controlled inverter systems, adjustable-speed motor drives, welding machines, uninterruptible power supplies (UPSs), and so on.

This IGBT module can ideally be used in power factor correction in power supplies, motor control, energy consumption, renewable energy systems, and industrial motor drive applications. It also enables the integration of fast-switching IGBTs in a low power consumption and compact footprint in the confining space of air conditioning, welding machines and uninterruptible power supply applications. This IGBT module is qualified for industrial applications and is considered to be UL status.

Working Principle of IRG7PH30K10PBF

The IRG7PH30K10PBF IGBT module is constructed from two discrete IGBTs, diodes, and a baseplate. The IGBTs are insulated gate-controlled semiconductor elements with three terminals (emitter, collector, and gate). The collector and emitter terminals are connected to the diode pair which allows current to flow only in the forward direction, eliminating any reverse current flow. The gate terminal is connected to a gate driver circuit which is used to switch the IGBTs.

In its normal off-state, the gate-emitter voltage is low and no current flows from the collector to the emitter. When the gate-emitter voltage increases, the device enters its quasi-saturation mode, allowing current to flow from the collector to the emitter with a near-zero Vce-sat. This near-zero Vce-sat ensures low power loss in the IGBT. Furthermore, the IGBT also features a high switching frequency, with a rated frequency of 1MHz, allowing it to be used in high-frequency applications.

Conclusion

The IGBT module IRG7PH30K10PBF has been designed with Infineon technologies, offering high speed switching, low power loss, and high surge current capability. The IGBT is qualified for industrial applications and is considered UL status, making it suitable for a wide range of applications. The device benefits from fast-switching with a rated frequency of 1MHz and a near-zero Vce-sat allowing for low power loss. As the device can be applied in power factor correction, motor control, energy consumption, and industrial motor drives, it has established itself as an efficient and reliable product for a wide range of applications for power electronics.

The specific data is subject to PDF, and the above content is for reference

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