IRG7U75HF12A Allicdata Electronics
Allicdata Part #:

IRG7U75HF12A-ND

Manufacturer Part#:

IRG7U75HF12A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 1200V 75A POWIR 34
More Detail: IGBT Module Half Bridge 1200V 150A 450W Chassis M...
DataSheet: IRG7U75HF12A datasheetIRG7U75HF12A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 450W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 7nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR® 34 Module
Supplier Device Package: POWIR® 34
Description

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IGBT modules are a type of power semiconductor device constructed of insulated gate bipolar transistors (IGBTs). The IRG7U75HF12A is an isolated gate bipolar transistor module manufactured by Infineon Technologies, a global semiconductor manufacturer. It features a maximum continuous drain current of 75 amps, a total switching energy of 5.3 mJ, and is available as either a standard IGBT or a reverse-blocking IGBT. This module is used in a wide range of applications, including motor control, inverters, solar and wind power, consumer electronics, and automotive systems.

An IGBT module operates by using an electrical signal to energize a gate electrical connection. This gate terminal controls the current flow between emitter and collector electrodes that are attached to the IGBT device. This current flow is further controlled by a variety of switches and gate drivers. By controlling the number of transistors present in the IGBT, the amount of current flowing through the module can be changed. This current flow can range from a low level of direct current (DC) to a high level of alternating current (AC).

The IRG7U75HF12A is an isolated gate bipolar transistor module designed for use in a wide variety of applications. It features a maximum continuous drain current of 75 amps, a total switching energy of 5.3 mJ, and is available as either a standard IGBT or a reverse-blocking IGBT. The module is also protected against over-current, over-temperature, and overheating. The module can also be used in automotive applications, such as motor control, battery management systems, and inverters, due to its superior noise and vibration resistance and high reliability.

The IRG7U75HF12A is also used in consumer electronics, such as air conditioners, power supplies, and LED lights. The module is highly reliable due to its advanced isolation technology and features a very low voltage drop when switching, resulting in higher efficiency and power density. The module\'s low on-state resistance and fast switching characteristics also enable higher frequency operations, making it ideal for power supplies, AC/DC converters, and motor drives.

The IRG7U75HF12A is also used in power supply transformers, enabling greater power conversion efficiency and improved power supply design. The module is also often used in electronic ballasts for fluorescent lamps and LED lights. For applications requiring higher power, the module can be connected in parallel to create a large current capacity.

The IRG7U75HF12A is an excellent choice for a wide range of power applications. It is a reliable, highly efficient IGBT module that combines a low on-state resistance, low switching losses, high frequency operation, and superior isolation technology. This module is suitable for a variety of applications, including motor control, air conditioning systems, power supplies, inverters, battery management systems, solar and wind power systems, and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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