| Allicdata Part #: | IRG7U150HF12B-ND |
| Manufacturer Part#: |
IRG7U150HF12B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOD IGBT 1200V 150A POWIR 62 |
| More Detail: | IGBT Module Half Bridge 1200V 300A 900W Chassis M... |
| DataSheet: | IRG7U150HF12B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| IGBT Type: | -- |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 300A |
| Power - Max: | 900W |
| Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 150A |
| Current - Collector Cutoff (Max): | 1mA |
| Input Capacitance (Cies) @ Vce: | 14nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | POWIR® 62 Module |
| Supplier Device Package: | POWIR® 62 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRG7U150HF12B is an IGBT module that is used in many applications. It is a reliable, cost-effective, and efficient power switch. The basic unit of this module is the Insulated Gate Bipolar Transistor (IGBT). An IGBT is a power semiconductor device that functions similarly to a MOSFET, but has characteristics closer to a bipolar junction transistor. This makes the module suitable for a wide range of applications. It is also capable of handling high-voltage and high-current applications.
The IRG7U150HF12B has a direct-gate trigger, meaning it can be switched with a low-voltage control signal. This makes it ideal for switching at higher frequencies, with the maximum switching speed of 25kHz. The module also has a low-collector-emitter saturation voltage, making it an attractive choice for applications requiring a high-current power switch.
The IRG7U150HF12B also benefits from an energy-efficient design. It has an adjustable soft recovery diode and an adjustable gate emitter recirculation diode, which limits switching losses and enhances the overall efficiency. Additionally, the module\'s design provides fast, stable, and safe operation. This makes the IRG7U150HF12B ideal for motor drives and power conversion systems in consumer and industrial markets.
The IRG7U150HF12B also offers flexibility in configuration. It has two separate chips with two different output ratings – 150A and 200A. The module can be used in a non-isolated configuration, as well as in an isolated configuration. This makes it suitable for a wide range of applications, including motor control, high-efficiency AC/DC power conversion and adjustable speed drives.
The IRG7U150HF12B is a robust and reliable module that can withstand harsh environmental conditions, including high temperatures and vibration. The module is also resistant to electro-static discharge and over-voltage. The module\'s fail-safe design ensures that the end-user\'s system will remain operational in the event of a failure within the module. This makes the IRG7U150HF12B an attractive choice for power switch applications.
In summary, the IRG7U150HF12B is an IGBT module that is designed for a wide range of applications. It has a direct-gate trigger, adjustable soft-recovery diode, adjustable gate emitter recovery diode, and two chips with different output ratings. The module also provides robust and reliable performance in harsh environmental conditions, and is resistant to electro-static discharge and over-voltage. The IRG7U150HF12B is an attractive choice for power switch applications.
The specific data is subject to PDF, and the above content is for reference
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IRG7U150HF12B Datasheet/PDF