IRG7PK35UD1MPBF

Series:	*
Part Status:	Obsolete

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The IRG7PK35UD1MPBF is a single IGBT (insulated gate bipolar transistor) made by International Rectifier Corporation. It is a three-terminal, bipolarpower semiconductor device which combines an N-Channel JFET (Junction Field Effect Transistor) and PNP bipolar junction transistor in a single package. It is designed to control the conduction of electrical current from its gate to the collector. The IRG7PK35UD1MPBF is one of the most popular IGBTs available in the market today, due to its versatile usage in a wide range of applications. The IRG7PK35UD1MPBF has a Maximum Collector Emitter Voltage (Vce) of 600V, a Maximum Collector-Base Voltage (Vcb) of 600V, and a Maximum Gate Emitter Voltage (Vge) of ±20V. It has a Drain-Source Voltage (Vds) of 600V, a Power Dissipation (Pd) of 3500W, and a Gate Charge (Qg) of 135nC maximum. Its Maximum Drain Current (Id) is 44A, and the Maximum Continuous Collector Current (Ic) is 28A. The IRG7PK35UD1MPBF also has a Transit Frequency (ft) of 150kHz and a Total Gate Charge (Qgd) of 30nC. Moreover, it has a Collector-Emitter Saturation Voltage (Vce).The IRG7PK35UD1MPBF has a wide range of applications, ranging from medium- and low-power applications to high-frequency power converters and motor drives. Due to its low on-state voltage drop, it is especially suitable for switching applications, such as AC motor drives, power switching, low-voltage motor controls, and industrial automation. It is also used in medium- and low-voltage applications, including invertors, HVAC, locomotive traction and ship propulsion systems.The IRG7PK35UD1MPBF has a few working principles, but essentially operates in the same fashion as a switch. The gate voltage is an important factor, as it is necessary to turn the device On and Off, and the input current determines how fast it reacts. When the gate voltage is above the threshold voltage (Vth), the IGBT turns ON and begins to conduct electrical current through the collector and emitter. As the gate-emitter voltage (Vge) is increased, the device’s current-handling capability increases as well. When the gate voltage is below the threshold voltage (Vth), the IGBT is turned Off and it stops conducting current. The IRG7PK35UD1MPBF is also capable of providing a very low on-state voltage drop, which is beneficial for applications with power losses and switchgear. The device is also characterized by an extremely fast switching speed, usually below 100ns, as well as a high input impedance, which allows for high power conduction with low losses. As such, the IRG7PK35UD1MPBF is a very efficient and reliable device for a wide range of applications.In conclusion, the IRG7PK35UD1MPBF is a single IGBT designed for medium and low-power applications. It has a wide range of features, including a low on-state voltage drop, fast switching speed, and high input impedance. It is used in a variety of applications such as HVAC , motor drives, power switching, and low-voltage motor controls. The IRG7PK35UD1MPBF is a highly efficient and reliable device, making it one of the most popular IGBTs in the market today.

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